首页> 外文会议>International Conference on Correlation Optics >Defect structure changes in the single Si-crystals afterirradiation by high-energy electrons and long natural agingby high-resolution three-crystal X-ray diffractometry
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Defect structure changes in the single Si-crystals afterirradiation by high-energy electrons and long natural agingby high-resolution three-crystal X-ray diffractometry

机译:高能量电子和长期自然变老度的单晶体流动的缺陷结构变化,高分辨率三晶X射线衍射法

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摘要

Methods of two- and three-crystal X-ray high-resolution diffractometry were used to investigate structural changesin Cz-Si single crystals irradiated with high-energy electrons (E=18 MeV). The results of experimental investigationwere interpreted by means of a generalized dynamic theory of X-ray diffraction in real crystals with randomlydistributed microdefects of various types and a damaged surface layer. As dominant defects, disc-shaped and sphericalclusters – Si02 precipitates, as well as dislocation loops were used.
机译:使用高能电子(E = 18meV)照射的两种和三晶X射线高分辨率衍射测定法的方法。通过具有不同类型的随机分布的微碎片和损坏的表面层的真实晶体中的X射线衍射的广义动态理论,解释了实验研究的结果。作为主要缺陷,使用圆盘形和球形直肠蛋白 - SiO 2沉淀物,以及脱位环。

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