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Analysis of Lateral SOI PIN Diodes for the Detection of Blue and UV Wavelengths in a Wide Temperature Range

机译:宽温度范围内横向SOI引脚二极管检测蓝色和紫外波长的分析

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PN junctions are often used as photodetectors. In these devices, electron-hole pairs are generated by the incidence of photons in the depleted region and carriers are separated by the electric field. The width of the depleted region is a trade-off between speed and sensitivity -it must be large enough to allow for the absorption of a large number of incident photons, but sufficiently short to reduce the transit time for drift of photogenerated carriers (1, 2). One common way to control the width of the depleted regions is to use PIN photodiodes. It consists of P and N regions separated by an intrinsic (I) region, with length Lj.
机译:PN结通常用作光电探测器。在这些装置中,通过耗尽区域中的光子的发生率产生电子空穴对,并且载流子通过电场分离。耗尽区域的宽度是速度和灵敏度之间的折磨 - 该速度必须足够大以允许吸收大量的入射光子,但足够短的以减少光生载体漂移的过渡时间(1, 2)。控制耗尽区域宽度的一种常用方法是使用PIN光电二极管。它由由内在(I)区域分开的P和N区域,具有长度LJ。

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