NITROGEN IN THIN SILICON WAFERS DETERMINED BY INFRARED SPECTROSCOPY

机译：红外光谱法测定薄硅片中的氮

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A procedure is developed for differential spectroscopic measurements with an improved photometric quality. A relatively quick periodical change of the analyzed and the reference samples was employed accompanied with a multiple spectra registration and mathematical treatment. As a result, a differential transmission spectrum was generated where the effect of the low frequency noise as well as a systematic drift during the accumulation of the spectral data were substantially reduced. The procedure was successfully applied to the determination of nitrogen in 200 mm - and 300 mm CZ Si wafers with a thickness of 730 μm and 780 μm. A detection limit of approximately 3 x 10~(14) atoms/cm~3 was achieved.

机译：开发了一种用于具有改进的光度质量的差分光谱测量程序。使用了相对快速的周期性变化的分析样品和参考样品，并进行了多光谱配准和数学处理。结果，产生了差分传输频谱，其中低频噪声的影响以及频谱数据累积期间的系统漂移被大大降低。该程序已成功用于测定厚度为730μm和780μm的200 mm和300 mm CZ Si晶片中的氮。检出限约为3 x 10〜（14）原子/ cm〜3。

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《》|2004年|P.109-120|共12页
会议地点 HonoluluHI(US)
作者
V.D. Akhmetov; O. Lysytskiy; H. Richter;
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作者单位

IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany;

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原文格式 PDF
正文语种 eng
中图分类 TN304.12;
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NITROGEN IN THIN SILICON WAFERS DETERMINED BY INFRARED SPECTROSCOPY

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