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Application of KOH Anisotropic Etching in the Fabrication of MEMS Devices

机译:KOH各向异性刻蚀在MEMS器件制造中的应用

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It is known that the wet chemical etching of silicon in alkaline solution has attracted wide attention due to its advantages such as lower cost, simpler setup, higher rate, smoother surface at micro level, higher degree of anisotropy, and lower pollution. In this paper, the key processes of fabricating vacuum microelectronic accelerometer and slits are presented. The cone curvature radius of the silicon tip arrays less than 30nm was fabricated with wet anisotropic etching of silicon in 33wt. % KOH solution at 70℃ added potassium iodine (KI) and Iodine (I_2 ) as additive and the cone aspect ratio was about 0.7. Smooth surface after etching in 33wt. %KOH solution added isopropyl alcohol (IPA) at 80 ℃ was obtained and lateral etching was less than 5um after etching several hours for etching depth over 400um. Scalar slits with bottom width 25um and depth 500um were attained. A constant etch rate lead to precise and reproducible production. The test result reveals that the process to a specific occasion can reach practical requirements.
机译:众所周知,碱溶液中硅的湿化学蚀刻由于其具有成本低,设置简单,速率高,在微观水平上更光滑,各向异性程度高和污染低等优点而受到广泛关注。本文介绍了制造真空微电子加速度计和缝隙的关键过程。硅尖端阵列的锥曲率半径小于30nm,是通过对33wt%的硅进行湿法各向异性蚀刻制成的。在70℃的KOH溶液中加入碘化钾(KI)和碘(I_2)作为添加剂,锥长宽比约为0.7。腐蚀后重量为33wt。刻蚀数小时,刻蚀深度超过400um,获得了在80℃下加入%KOH溶液的异丙醇(IPA),横向刻蚀小于5um。获得底部宽度为25um,深度为500um的标量缝。恒定的蚀刻速率可实现精确且可重复的生产。测试结果表明该过程在特定场合下可以达到实际要求。

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