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首页> 外文会议>International Conference of Chinese Society of Micro-Nano Technology;Annual Conference of the Chinese Society of Micro-Nano Technology >Effect of Temperature on Elasticity of Silicon Nanowires
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Effect of Temperature on Elasticity of Silicon Nanowires

机译：温度对硅纳米线弹性的影响

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A semi-continuum approach is developed for mechanical analysis of a silicon nanowire, which captures the atomistic physics and retains the efficiency of continuum models. By using the Keating model, the strain energy of the nanowire required in the semi-continuum approach is obtained. Young's modulus of the silicon (001) nanowire along [100] direction is obtained by the developed semi-continuum approach. Young's modulus decreases dramatically as the size of a silicon nanowire width and thickness scaling down, especially at several nanometers, which is different from its bulk counterpart. The semi-continuum approach is extended to perform a mechanical analysis of the silicon nanowire at finite temperature. Taking into account the variations of the lattice parameter and the bond length with the temperature, the strain energy of the system is computed by using Keating anharmonic model. The dependence of young's modulus of the nanowire on temperature is predicted, and it exhibits a negative temperature coefficient.
机译：开发了一种用于硅纳米线力学分析的半连续方法，该方法捕获了原子物理学，并保留了连续模型的效率。通过使用Keating模型，获得了半连续方法所需的纳米线的应变能。硅（001）纳米线沿[100]方向的杨氏模量是通过开发的半连续方法获得的。杨氏模量随着硅纳米线宽度和厚度尺寸的减小而急剧减小，尤其是在几纳米时，这与其体相差很大。扩展了半连续方法，以在有限的温度下对硅纳米线进行机械分析。考虑到晶格参数和键长随温度的变化，利用基廷非谐模型计算了系统的应变能。预测了纳米线的杨氏模量对温度的依赖性，并且其表现出负温度系数。

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