Temperature-Dependent Growth of Germanium Oxide and Silicon Oxide Based Nanostructures, Aligned Silicon Oxide Nanowire Assemblies, and Silicon Oxide Microtubes

Junqing Hu; Yang Jiang; Xiangmin Meng; Chun-Sing Lee; Shuit-Tong Lee

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Temperature-Dependent Growth of Germanium Oxide and Silicon Oxide Based Nanostructures, Aligned Silicon Oxide Nanowire Assemblies, and Silicon Oxide Microtubes

机译：氧化锗和氧化硅基纳米结构，对准的氧化硅纳米线组件以及氧化硅微管的温度依赖性生长。

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摘要

We demonstrate the temperature-dependent growth of germanium oxide and silicon oxide based composite nanostructures (multiple nanojunctions of Ge nanowires and SiOx nanowires, Ge-filled SiO_2 nanotubes, Ge/SiO_2 coaxial nanocables, and a variety of interesting micrometer-sized structures), aligned SiOx nanowire assemblies, and SiOx microtubes. The structures were characterized by SEM, TEM, energy-dispersive X-ray spectroscopy, and electron diffraction. The combination of laser ablation of a germanium target and thermal evaoporation of silicon monoxide powders resulted in the formation of Ge and SiOx species in a carrier gas; the nano/micro-sized structures grow by either a Ge-catalyzed vapor-liquid-solid or a Ge-nanowire-templated vapor-solid process.

机译：我们证明了氧化锗和氧化硅基复合纳米结构（Ge纳米线和SiOx纳米线的多个纳米结，Ge填充的SiO_2纳米管，Ge / SiO_2同轴纳米电缆以及各种有趣的微米级结构）的温度依赖性增长。 SiOx纳米线组件和SiOx微管。通过SEM，TEM，能量色散X射线光谱和电子衍射对结构进行了表征。锗靶材的激光烧蚀与一氧化硅粉末的热蒸发相结合，导致在载气中形成Ge和SiOx物种。纳米/微米级结构通过Ge催化的气液固或Ge-纳米线模板气固工艺生长。

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来源
《Small》 |2005年第4期|p. 429-438|共10页
作者
Junqing Hu; Yang Jiang; Xiangmin Meng; Chun-Sing Lee; Shuit-Tong Lee;
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作者单位

International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan;

Department of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui (P. R. China);

Technical Institute of Physics and Chemistry, Chinese Academy of Sciences (CAS), Beijing (P. R. China);

Center of Super-Diamond and Advanced Films (COSFAD), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (P. R. China);

Center of Super-Diamond and Advanced Films (COSFAD), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (P. R. China);

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原文格式 PDF
正文语种 eng
中图分类特种结构材料;
关键词
germanium; microstructures; nanowires; oxides; silicon;

机译：锗;微结构;纳米线;氧化物;硅;

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专利

1. Temperature-Dependent Growth of Germanium Oxide and Silicon Oxide Based Nanostructures, Aligned Silicon Oxide Nanowire Assemblies, and Silicon Oxide Microtubes [J] . Junqing Hu, Yang Jiang, Xiangmin Meng, Small . 2005,第4期

机译：基于温度的生长氧化锗和氧化硅基纳米结构，对准的氧化硅纳米线组件以及氧化硅微管
2. Enhancement of the photoluminescence of silicon oxide defect states by combining silicon oxide with silicon nanowires [J] . P. Noe, J. Guignard, P. Gentile, Journal of Applied Physics . 2007,第1期

机译：通过结合氧化硅和硅纳米线来增强氧化硅缺陷态的光致发光
3. Heterostructures of germanium nanowires and germanium-silicon oxide nanotubes and growth mechanisms [J] . J Q Huang, S Y Chiam, W KChim, Nanotechnology . 2009,第42期

机译：锗纳米线和锗硅氧化物纳米管的异质结构及其生长机理
4. Comparative Analysis of Growth Rate Enhancement and Ge redistribution During Silicon-Germanium Oxidation by Rapid Thermal Oxidation [C] . F. Roze, O. Gourhant, E. Blanquet, PRiME Joint International Meeting of the Electrochemical Society, the Electrochemical Society of Japan, and the Korean Electrochemical Society . 2016

机译：快速热氧化在硅锗氧化过程中生长速率增强和GE再分配的比较分析
5. Ballistic electron emission microscopy and internal photoemission study on metal bi-layer/oxide/silicon, high-k oxide/silicon, and "end-on" metal contacts to vertical silicon nanowires. [D] . Cai, Wei. 2010

机译：金属双层/氧化物/硅，高k氧化物/硅以及垂直硅纳米线的“端对端”金属触点的弹道电子发射显微镜和内部光发射研究。
6. Comparative study of macroporous silicon-based photovoltaic characteristics using indium tin oxide-silicon and pn-silicon junction based devices [O] . Amarachukwu N. Enemuo, Hojjat Rostrami Azmand, Paul Bang, -1

机译：使用基于铟锡氧化物的硅和pn硅结的器件对基于大孔硅的光伏特性进行比较研究
7. Crystal structure of manganese gallium germanium silicon oxide (garnet type), Mn-3(Ga2-yMny)(Ge3-zSiz)O-12 (y=0.6, z=0.14; y=0.44, z=0), and of manganese gallium germanium silicon oxide (braunite type), Mn(Mn6-yGay)(Si1-zGez)O-12 (y=0.7, z=0.4) [O] . Wartchow R., Müller L., Binnewies M. 2003

机译：锰镓锗硅氧化物（石榴石型），Mn-3（Ga2-yMny）（Ge3-zSiz）O-12（y = 0.6，z = 0.14; y = 0.44，z = 0）和锰的晶体结构镓锗硅氧化物（褐铁矿型），Mn（Mn6-yGay）（Si1-zGez）O-12（y = 0.7，z = 0.4）
8. Silicon-Based Oxide/Silicon/Oxide Resonant Tunneling [R] . Seabaugh, A. , Wallace, R. M. 1998

机译：硅基氧化物/硅/氧化物共振隧穿

Temperature-Dependent Growth of Germanium Oxide and Silicon Oxide Based Nanostructures, Aligned Silicon Oxide Nanowire Assemblies, and Silicon Oxide Microtubes

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