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Molecular dynamic simulations of contact thermal resistance between two individual silicon nanowires

机译:两条单独的硅纳米线之间接触热阻的分子动力学模拟

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Contact thermal resistance between two individual silicon nanowires is investigated by nonequilibrium molecular dynamic simulations as a function of temperature, overlap, bonding strength and spacing between them. The results indicate that contact thermal resistance per unit area increases with temperature increasing. The increasing overlap leads to the increase of the contact areas, which enhances the per unit area contact thermal resistance. With a weakened interfacial van der Waals bonding strength, the contact thermal resistance per unit area increases significantly. Additionally, a method to verify the effect of the bonding strength is used by changing the interfacial spacing, and a reasonable result is observed.
机译:通过非平衡分子动力学模拟研究了两条单独的硅纳米线之间的接触热阻,该模拟是温度,重叠,键合强度和它们之间的间距的函数。结果表明,单位面积的接触热阻随温度的升高而增加。重叠的增加导致接触面积的增加,从而增加了单位面积的接触热阻。随着界面范德华力的减弱,单位面积的接触热阻显着增加。另外,通过改变界面间距使用验证结合强度的效果的方法,并且观察到合理的结果。

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