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Fabrication of Silicon Nano-wire by Oxidation

机译:氧化法制备硅纳米线

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摘要

In this paper, we report a method of fabricating silicon nano-wire based on thermal oxidation technique. In this method, we first fabricate a wider structure with traditional lithography, and then use a layer of silicon nitride as mask to oxidize silicon. At the same time, due to the lateral diffusion and oxidation of oxidant, silicon is consumed by oxidant and the width of the silicon structure will be reduced to nano range when we remove the silicon dioxide. The factors affecting the ratio of vertical and lateral oxidation, for example, the gentle slope caused by isotropic oxidation and the inhomogeneity of the sidewall of silicon nano-wire, are discussed at last. Our results should be useful in generating silicon-based nanospintronics devices with careful selection of the oxide parameters.
机译:在本文中,我们报告了一种基于热氧化技术的硅纳米线的制备方法。在这种方法中,我们首先使用传统的光刻技术来制造更宽的结构,然后使用氮化硅层作为掩模来氧化硅。同时,由于氧化剂的横向扩散和氧化作用,硅被氧化剂消耗,当我们去除二氧化硅时,硅结构的宽度将减小到纳米范围。最后讨论了影响垂直和横向氧化比的因素,例如,各向同性氧化引起的缓坡和硅纳米线侧壁的不均匀性。我们的结果在仔细选择氧化物参数的情况下,对于产生基于硅的纳米自旋电子器件很有用。

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