Department of Electrical Engineering, University of California - Riverside, 900 University Ave.,Riverside, CA, USA, 92521;
Department of Electrical Engineering, University of California - Riverside, 900 University Ave.,Riverside, CA, USA, 92521;
Department of Mechanical Engineering, University of California - Riverside, 900 University Ave.,Riverside, CA, USA, 92521;
Department of Mechanical Engineering, University of California - Riverside, 900 University Ave.,Riverside, CA, USA, 92521,Material Engineering and Science Program, University of California - Riverside, 900 University Ave., Riverside, CA, USA, 92521;
Department of Electrical Engineering, University of California - Riverside, 900 University Ave.,Riverside, CA, USA, 92521;
indium atimonide; nanowire; data transmission; eye diagram; bit error rate; q-factor;
机译:直径小于20 nm的锑化铟纳米线的电荷载流子传输和数字数据传输性能
机译:铟催化剂厚度对PECVD生长的硅纳米线性能影响的研究
机译:通过透射电子显微镜和X射线衍射显示,LP-MOCVD在块状GaN晶体上生长的InGaN / GaN激光有源结构中的均匀铟分布
机译:20 nm以下锑化铟纳米线的胆汁数据传输性能
机译:在中红外激光应用中,在砷化铟衬底上进行砷化铟锑化物/砷化铟(磷化锑)的MOCVD生长和表征。
机译:锑化铟纳米线:合成与性能
机译:出版物“锑化铟纳米线中通过螺旋态的电导”随附的数据和脚本
机译:分子束外延生长砷化铟锑半导体的光学表征