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Data transmission performance of CVD grown sub-20 nm indium antimonide nanowires

机译:CVD生长的20纳米以下锑化铟纳米线的数据传输性能

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摘要

We investigated the data transmission performance of indium antimonide (InSb) nanowires (NWs) synthesized on InSb (100) substrate using chemical vapor deposition (CVD) having diameters below 20 nm. The data transmission measurement was accomplished over the NW field effect transistors (N WFETs) fabricated on Si/Si()2 substrates. Digital data stream is randomly generated and then uploaded to a waveform generator which generates the stream and transmits it repeatedly with the desired frequency. The signal was applied on the sources of the NWFETs and collected from the drains of the same devices. Collected data was first filtered with a low pass filter (LPF), and then the output of the filter was used to create the eye diagrams of the NWs. Bit error rate (BERs), attenuation , quality factor (Q-factor) and maximum data transmission are extracted from eye diagrams. The results indicate that the data transmission performance of NWs suffer from low mobility values on the order of 10-to-15 cm2V-ls-l because of their small diameters, crystal defects and oxidation occurs during growth and cooling. 20 nm NWs can sustain data rates up to 10 mega bits per second (Mbps) and the data rate is directly proportional to the diameter of the NWs.
机译:我们研究了使用直径小于20 nm的化学气相沉积(CVD)在InSb(100)基板上合成的锑化铟(InSb)纳米线(NWs)的数据传输性能。数据传输测量是通过在Si / Si()2基板上制造的NW场效应晶体管(N WFET)完成的。数字数据流是随机生成的,然后上载到波形发生器,该波形发生器将生成该数据流并以所需的频率重复发送。信号被施加在NWFET的源极上,并从相同器件的漏极收集。首先使用低通滤波器(LPF)对收集的数据进行滤波,然后使用该滤波器的输出来创建NW的眼图。从眼图中提取了误码率(BERs),衰减,质量因子(Q因子)和最大数据传输。结果表明,NW的数据传输性能因其小直径,生长和冷却过程中发生晶体缺陷和氧化而遭受10至15 cm2V-1s-1量级的低迁移率值。 20 nm NW可以维持高达10兆位每秒(Mbps)的数据速率,并且数据速率与NW的直径成正比。

著录项

  • 来源
    《Metamaterials: Fundamentals and applications IV》|2011年|p.80931Y.1-80931Y.11|共11页
  • 会议地点 San Diego CA(US)
  • 作者单位

    Department of Electrical Engineering, University of California - Riverside, 900 University Ave.,Riverside, CA, USA, 92521;

    Department of Electrical Engineering, University of California - Riverside, 900 University Ave.,Riverside, CA, USA, 92521;

    Department of Mechanical Engineering, University of California - Riverside, 900 University Ave.,Riverside, CA, USA, 92521;

    Department of Mechanical Engineering, University of California - Riverside, 900 University Ave.,Riverside, CA, USA, 92521,Material Engineering and Science Program, University of California - Riverside, 900 University Ave., Riverside, CA, USA, 92521;

    Department of Electrical Engineering, University of California - Riverside, 900 University Ave.,Riverside, CA, USA, 92521;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 材料;
  • 关键词

    indium atimonide; nanowire; data transmission; eye diagram; bit error rate; q-factor;

    机译:胺碘化铟纳米线数据传输;眼图;误码率; q因子;

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