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首页> 外文会议>Metrology, Inspection, and Process Control for Microlithography XX pt.1 >Line edge roughness on photo lithographic masks
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Line edge roughness on photo lithographic masks

机译：光刻掩模上的线条边缘粗糙度

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Line edge roughness (LER) has become a standard topic in the semiconductor industry for its possible yield impact on wafer production. Recently a number of studies address its measurement process to increase the reliability of results. Here, we investigated roughness on photo lithographic masks, which is the blue print for wafer production. It is shown that LER influences feature uniformity and thus has a considerable impact on overall mask production yield. To determine the roughness parameters we varied measurement parameters on a scanning electron microscope to optimize reproducibility and repeatability of the obtained values. Two parameters dominate the LER values. The first parameter is the length used to average the signal from the scanning electron microscope and to obtain the position of a single edge point. Good results for this so called summing length were obtained for values above 100 nm. The second important parameter is the total length of the investigated line that is used to calculate the LER. Here, we found that the increase of LER values with increasing investigation length is similar to the well-established behavior on wafers. It was found that the average LER value calculated from various sites saturates at investigation lengths larger than 10 μm, whereas single LER results show no scattering within measurement precision for investigation lengths larger than 30 μm independently of mask position. In comparison to similar investigation on wafer both the summing length as well as the investigation length have to be chosen about one magnitude larger. It is suggested that the multi exposure process of mask creates roughness on length scales of the order of several micrometers.
机译：线边缘粗糙度（LER）由于可能对晶圆生产产生良率影响，因此已成为半导体行业的标准主题。最近，许多研究针对其测量过程以提高结果的可靠性。在这里，我们研究了光刻掩模的粗糙度，这是晶圆生产的蓝图。结果表明，LER影响特征均匀性，因此对掩模的总产量有相当大的影响。为了确定粗糙度参数，我们在扫描电子显微镜上改变测量参数以优化所获得值的可重复性和可重复性。 LER值由两个参数决定。第一个参数是用于平均来自扫描电子显微镜的信号并获得单个边缘点位置的长度。对于100 nm以上的值，获得了所谓的求和长度的良好结果。第二个重要参数是用于计算LER的调查线的总长度。在这里，我们发现随着研究时间的增加，LER值的增加与晶圆上已确立的行为相似。发现从各个位置计算出的平均LER值在大于10μm的调查长度处达到饱和，而对于大于30μm的调查长度，单个LER结果显示在测量精度内没有散射，而与掩模位置无关。与对晶片的类似研究相比，求和长度以及研究长度都必须选择大大约一个数量级。建议掩模的多次曝光过程在几微米量级的长度尺度上产生粗糙度。

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