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首页> 外文会议>Metrology, Inspection, and Process Control for Microlithography XX pt.2 >Use In-line AFM to Monitor STI Profile in 65nm Technology Development
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Use In-line AFM to Monitor STI Profile in 65nm Technology Development

机译：在65nm技术开发中使用串联AFM监视STI轮廓

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摘要

In the 65nm process development, use traditional top-view SEM and off-line XSEM & TEM to monitor STI profile became insufficient and inefficient. How to find one non-destructive, in-line monitor method to monitor trench depth, step height, and micro-planarity of STI (Shallow Trench Isolation) module profile become more important and challenge than before. In-line AFM just cover this challenge during 65nm process development stage. In this paper, we report how to use in-line Atomic Force Microscope (AFM) technology to monitor STI module profile. Use of this technology on profile step-height and critical dimension in production facilities offers superior precision, accuracy, non-destructive. high throughput and cost effective measurement result. Meanwhile, this paper outlines the implementation of AFM based metrology in an automatic production facility. We focus on the process step just after nitride removed, two key applications on this step, one is to monitor the step height difference and the other is to monitor divot depth at the interfaces height difference between the active area and the isolation area within the STI module. Because the STI step height and divot after oxide fill might dominate the device threshold voltage value(Vt), we check the step height and divot of STI from SiN removed step to the step of thin gate oxide AEI. Then we check and trace where these defect occurred. We also measured 11 points on 300mn wafer to come out one wafer-level topographic chart to monitor its cross-wafer uniformity. Besides, we compared and correlated the AFM measurement result with FA TEM data. It shows good correlation result between X3D AFM and FA TEM. It means this in-line measurement method could efficient act as one important role on advanced STI module process development.
机译：在65nm工艺开发中，使用传统的顶视图SEM和离线XSEM和TEM监视STI轮廓变得不足和效率低下。如何找到一种非破坏性的在线监测方法来监测沟槽深度，台阶高度和STI（浅沟槽隔离）模块轮廓的微平面性，变得比以往更加重要和具有挑战性。在线AFM正是在65nm工艺开发阶段就解决了这一挑战。在本文中，我们报告了如何使用在线原子力显微镜（AFM）技术监视STI模块的配置文件。在生产设备的轮廓台阶高度和关键尺寸上使用此技术可提供卓越的精度，准确性和无损检测。高通量和具有成本效益的测量结果。同时，本文概述了在自动生产设备中基于AFM的计量的实现。我们专注于氮化物去除后的工艺步骤，此步骤有两个关键应用，一个是监视台阶高度差，另一个是监视STI内有效区域和隔离区域之间的界面高度差处的草皮深度模块。由于STI的台阶高度和氧化层填充后的厚度可能会影响器件阈值电压值（Vt），因此我们检查了从SiN去除步骤到薄栅极氧化物AEI的STI的台阶高度和厚度。然后，我们检查并跟踪这些缺陷发生的位置。我们还测量了3亿个晶圆上的11个点，得出一张晶圆级的形貌图，以监控其晶圆间的均匀性。此外，我们将AFM测量结果与FA TEM数据进行了比较和关联。在X3D AFM和FA TEM之间显示出良好的相关结果。这意味着这种在线测量方法可以有效地充当高级STI模块工艺开发的重要角色。

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