首页> 外文会议>Metrology, Inspection, and Process Control for Microlithography XX pt.2 >Lithography Rework Reduction and Improved Process Control using AIM Targets on Aluminum Layers in the High Volume Production of 110nm DRAM Devices
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Lithography Rework Reduction and Improved Process Control using AIM Targets on Aluminum Layers in the High Volume Production of 110nm DRAM Devices

机译:在110nm DRAM器件的批量生产中,使用铝层上的AIM目标减少光刻返工并改善工艺控制

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摘要

AIM grating targets were optimized and implemented on the metal 2 Aluminum layer in high volume production of 110nm DRAM devices. Grating target structures are intrinsically more compatible with Aluminum process design rules, allowing overlay target optimization to better fit the process and better cope with the large grain structure of the Aluminum layer. With the implementation of AIM overlay targets we were able to achieve tighter control of the Aluminum patterning, we also achieved smaller overlay residuals, better matching between post litho and post etch measurements, better modeling and less rework. Above all, AIM targets improve the overlay metrology tool capability and provide a better tool-to-tool matching performance.
机译:在大批量生产110nm DRAM器件的过程中,在金属2铝层上优化并实现了AIM光栅靶。光栅靶结构本质上与铝制工艺设计规则更兼容,从而可以优化覆盖靶材,以更好地适应工艺并更好地应对铝层的大晶粒结构。通过实现AIM覆盖目标,我们可以实现对铝图案的更严格控制,还实现了较小的覆盖残差,光刻后和蚀刻后测量之间的更好匹配,更好的建模和更少的返工。最重要的是,AIM目标提高了重叠计量工具的功能,并提供了更好的工具间匹配性能。

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