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The Effect of Transmission Reduction by Reticle Haze Formation

机译:十字线薄雾形成对减少传输的影响

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Recently, a pattern size gradually has reduced to enhance the integration of semiconductor device. As minimum linewidths have shrunk, the exposure wavelength has also progressively shrunk. The exposure wavelengths have been reduced progressively from 436 nm to 365 nm to 248 nm to 193 nm. Expose wavelength shrink caused some serious problems. One of the problems to be solved is growing defect in the reticle during the process. Reticle growing defect is called a haze. Haze is formed around the pellicle, on the quartz side of the mask and on the chrome side of the mask. In this investigation, mask haze is intentionally formed on the backside of mask by 193 nm laser irradiation. And the thickness is measured by the spectroscopic ellipsometry. This paper describes the relationship between transmittance and the haze formation, photochemical reactions and the haze effect on the process latitude. In addition, throughput is decreased due to haze formation.
机译:最近,图案尺寸逐渐减小以增强半导体器件的集成度。随着最小线宽的缩小,曝光波长也逐渐缩小。曝光波长已逐渐从436 nm减小到365 nm,从248 nm减小到193 nm。曝光波长的收缩引起一些严重的问题。要解决的问题之一是在该过程中掩模版中的缺陷不断增加。掩模版增长的缺陷称为雾霾。薄雾在防护膜周围,面罩的石英侧和面罩的铬侧形成。在这项研究中,有意通过193 nm激光照射在掩模的背面形成掩模雾度。厚度是通过光谱椭圆偏振法测量的。本文描述了透射率与雾度形成,光化学反应以及雾度对工艺范围的影响之间的关系。另外,由于混浊的形成,通量降低。

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