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首页> 外文期刊>Surface and Interface Analysis: SIA: An International Journal Devoted to the Development and Application of Techniques for the Analysis of Surfaces, Interfaces and Thin Films >Characterization and reduction of pellicle degradation due to haze formation on leading edge technology photomasks
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Characterization and reduction of pellicle degradation due to haze formation on leading edge technology photomasks

机译：领先地位技术光掩模上雾霾地层引起的表征及降低

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摘要

Since the adoption of deep ultraviolet lithography, time-dependent haze defects have become an increasingly significant problem for the semiconductor industry as photomask lifetime continues to be shortened due to molecular contamination. With shorter wavelength lithography, the materials and space between the pellicle film and photomask surface can create a highly reactive environment resulting in the formation of haze defects on the photomask. One critical issue has been to understand the chemical mechanism of evolving defects on the photomask triggered by haze formation. This fundamental study was completed in a manufacturing environment in response to a sudden increase of haze defect growth during the transition to new device nodes. Time-of-Flight Secondary Ion Mass Spectrometry and Atomic Force Microscopy analysis techniques were essential in characterizing pellicle degradation in parallel with increased haze defect growth on the photomask surface. Extensive chemical and surface topography characterization of pellicle degradation led to a vitally important development and implementation of a design change in the pellicle frame for Flash Memory 3x and 2x nm node critical process layer photolithography. With an increased clearance between the pattern design and pellicle edge, the design modification ultimately brought an immense increase in photomask dose limitation between repell cleans and a reduction in haze growth, thus, reducing production costs and increasing wafer throughput.
机译：由于采用深紫色光刻，时间依赖性阴霾缺陷已成为半导体工业的越来越大的问题，因为由于分子污染，光掩模寿命继续缩短。具有较短的波长光刻，薄膜膜和光掩模表面之间的材料和空间可以产生高反应性环境，导致光掩模上的雾度缺陷形成。一项重要问题是了解由雾度形成触发的光掩模在光掩模上不断变化的化学机制。这种基本研究在制造环境中完成了在过渡到新器件节点期间雾度缺陷生长的突然增加。飞行时间二次离子质谱和原子力显微镜分析技术在表征薄膜降解方面是必不可少的，随着光掩模表面上的增加的雾度缺陷生长。广泛的化学和表面形貌表征薄膜降解导致了闪存3X和2X NM节点临界过程层光刻的薄膜框架中的设计变化的重要性发展和实现。随着图案设计和薄膜边缘之间的间隙增加，设计改性最终在雷尔清洁物之间的光掩模剂量限制和雾度生长的降低，从而降低了生产成本并增加了晶片产量。

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