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Statistical analysis of CD SEM measurement and process control in the indistinguishable multi-process patterns

机译:难以区分的多过程模式下CD SEM测量和过程控制的统计分析

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As device size is going under the sub-60nanometer scale, lithography is facing its resolution limit. To solve this resolution limit it has been suggested that one critical device layer could be made from multi photo/etch process, which needs tighter overlay and critical dimension (CD) controls than normal single exposure process. For CD control in this multi photo/etch process, the problem is that we do not know which pattern is made from which photo/etch process after final process. This makes it impossible to measure the specific process pattern's CD independently. In this case the conventional CD measuring method, which measures multi CDs in FOV(Field Of View) of SEM(Scanning Electronic Microscope) and control their average and distribution, couldn't know the average difference between both patterns because the variance from simply measured multi CD is just sum of each variance and their cross terms not including the average difference. In this paper it is pointed out the statistical problem of classical multi CD measurement in the indistinguishable multi process pattern and a compensative method is suggested with a new statistical formula.
机译:随着器件尺寸小于60纳米尺度,光刻技术正面临其分辨率极限。为了解决该分辨率极限,已经提出可以通过多次照相/蚀刻工艺来制造一个关键器件层,与常规的单次曝光工艺相比,该工艺需要更严格的覆盖和关键尺寸(CD)控制。对于在该多照片/蚀刻过程中的CD控制,问题在于我们不知道最终过程之后是从哪个照片/蚀刻过程中制成哪种图案。这使得不可能独立地测量特定过程模式的CD。在这种情况下,传统的CD测量方法无法在SEM(扫描电子显微镜)的FOV(视场)中测量多个CD并控制其平均值和分布,因此无法知道两种模式之间的平均差异,因为简单测量的方差multi CD只是每个方差及其交叉项的和,不包括平均差。指出了经典的多CD测量在无法区分的多过程模式下的统计问题,并提出了一种新的统计公式作为补偿方法。

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