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首页> 外文会议>Microelectromechanical structures for materials research >INTERNAL STRESS OF ZnO THIN FILMS CAUSED BY THICKNESS DISTRIBUTION AND CRYSTALLINITY
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INTERNAL STRESS OF ZnO THIN FILMS CAUSED BY THICKNESS DISTRIBUTION AND CRYSTALLINITY

机译：厚度分布和结晶度引起的ZnO薄膜的内部应力

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摘要

The improvement of thickness distribution and crystallinity in ZnO thin films prepared by radio frequency (rf) planer magnetron sputtering has been studied. Optimum thickness distribution of less than ±2.2% in a 3-inch wafer is obtained by changing the substrate angle to the ZnO target and is in accordance with cosine law. The c-axis orientation perpendicular to the silicon substrate is confirmed by x-ray diffraction. The stress of ZnO thin films is larger than 0.3GPa and its distribution is independent of the substrate angle that is set at a slant to the optimum angle for thickness distribution. These results indicate that thickness distribution of ZnO thin films heavily depends on the substrate angle, while the stress and its distribution are independent of the setting angle of the substrate. Stress distribution is attributed to the distribution of argon ions and sputtered molecules impinging a wafer.
机译：研究了通过射频（rf）平面磁控管溅射制备的ZnO薄膜的厚度分布和结晶度的改善。通过改变衬底与ZnO靶的夹角，可以得到3英寸晶圆中小于±2.2％的最佳厚度分布，并且符合余弦定律。垂直于硅基板的c轴取向通过X射线衍射确认。 ZnO薄膜的应力大于0.3GPa，并且其分布与衬底角度无关，该衬底角度被倾斜为厚度分布的最佳角度。这些结果表明，ZnO薄膜的厚度分布在很大程度上取决于衬底的角度，而应力及其分布与衬底的安装角度无关。应力分布归因于氩离子和撞击晶片的溅射分子的分布。

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  • 会议地点 San Francisco CA(US)
  • 作者

    M.Takeuchi; K.Inoue; Y.Yoshino; K.Ohwada;

  • 作者单位

    RD division, Murata Mfg. Co., Ltd., 1-18-1 Hakusan Midoriku, Yokohama, Kanagawa 226-0006, Japan;

    RD division, Murata Mfg. Co., Ltd., 1-18-1 Hakusan Midoriku, Yokohama, Kanagawa 226-0006, Japan;

    RD division, Murata Mfg. Co., Ltd., 1-18-1 Hakusan Midoriku, Yokohama, Kanagawa 226-0006, Japan;

    RD division, Murata Mfg. Co., Ltd., 1-18-1 Hakusan Midoriku, Yokohama, Kanagawa 226-0006, Japan;

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  • 正文语种 eng
  • 中图分类 结构;材料;
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