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DOPANT MAPPING AND STRAIN ANALYSIS IN B DOPED SILICON STRUCTURES USING MICRO-RAMAN SPECTROSCOPY

机译:掺硼硅结构中的掺杂剂映射和拉曼光谱分析

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摘要

Raman microscopy, using a novel line focus configuration, has been used here to study boron concentration distributions and depth profiles in silicon for two different sources of dopant. Changes in the Raman phonon peak frequency for boron doped silicon have been calibrated against concentration by comparison with SIMS data and a relationship between Raman shift and lattice strain has been obtained.
机译:拉曼显微镜使用一种新颖的线聚焦配置,已在这里用于研究两种不同掺杂剂源中硅中硼的浓度分布和深度分布。通过与SIMS数据进行比较,对硼掺杂硅的拉曼声子峰值频率的变化进行了浓度校正,并获得了拉曼位移与晶格应变之间的关系。

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  • 会议地点 San Francisco CA(US)
  • 作者单位

    Department of Chemical and Life Sciences, University of Northumbria at Newcastle, Ellison Place, Newcastle upon Tyne, NE1 8ST, UK;

    Department of Chemical and Life Sciences, University of Northumbria at Newcastle, Ellison Place, Newcastle upon Tyne, NE1 8ST, UK;

    Department of Chemical and Life Sciences, University of Northumbria at Newcastle, Ellison Place, Newcastle upon Tyne, NE1 8ST, UK;

    School of Engineering, University of Durham, South Road, Durham, DH1 3LE, UK;

    School of Engineering, University of Durham, South Road, Durham, DH1 3LE, UK;

    Department of Mechanical Engineering, Newcastle University, Stephenson Building, Newcastle upon Tyne, NE1 7RU, UK;

    Department of Mechanical Engineering, Newcastle University, Stephenson Building, Newcastle upon Tyne, NE1 7RU, UK;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 结构;材料;
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