POLYSILICON TENSILE TESTING WITH ELECTROSTATIC GRIPPING

机译：静电抓地力的多晶硅拉伸测试

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Techniques and procedures are described for tensile testing of polysilicon specimens that are 1.5 or 3.5 μm thick and have various widths and lengths. The specimens are fixed to the wafer at one end and have a large free end that can be gripped by electrostatic forces. This enables easy handling and testing and permits the deposition of 18 specimens on a one-centimeter square portion of a wafer. The displacement of the free end is monitored, which allows one to extract Young's modulus from the force-displacement record. Some of the wider specimens have two gold lines applied so that strain can be measured interferometrically directly on the specimen to record a stress-strain curve.rnThe specimens were produced at the Microelectronics Center of North Carolina (MCNC). When compared with earlier results of wider MCNC specimens that were 3.5 μm thick, the Young's modulus is smaller and the strength is slightly larger.

机译：描述了用于1.5或3.5μm厚且具有各种宽度和长度的多晶硅样品的拉伸测试的技术和程序。标本的一端固定在晶片上，并具有较大的自由端，可以被静电力抓住。这使操作和测试变得容易，并允许将18个样本沉积在晶片的一厘米见方的部分上。监控自由端的位移，这允许人们从力位移记录中提取杨氏模量。一些较宽的标本上有两条金线，因此可以通过干涉法直接在标本上测量应变，以记录应力-应变曲线。标本是在北卡罗来纳州微电子中心（MCNC）生产的。与较早的较宽的MCNC样品（3.5μm厚）的结果相比，杨氏模量较小，强度稍大。

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来源
《Microelectromechanical structures for materials research》|1998年|191-196|共6页
会议地点 San Francisco CA(US)
作者
W. N. SHARPE JR; K. TURNER; R. L. EDWARDS;
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作者单位

ME Department, Johns Hopkins University, Baltimore, MD 21218;

ME Department, Johns Hopkins University, Baltimore, MD 21218;

Applied Physics Laboratory, Johns Hopkins University, Laurel, MD 20723;

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原文格式 PDF
正文语种 eng
中图分类结构;材料;
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POLYSILICON TENSILE TESTING WITH ELECTROSTATIC GRIPPING

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