A Series Association Model For Double Gate Graded-Channel SOI nMOSFET Analog Circuit Simulation

机译：双栅极渐变沟道SOI nMOSFET模拟电路仿真的系列关联模型

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

In this work we present the development of an equivalent series association analytical model for double gate (DG) Silicon-on-Insulator (SOI) nMOSFET transistor with graded-channel (GC) that is valid from weak inversion to strong inversion. Through the use of DG analytical models available in the literature, considering an equivalent structure represented by two transistors with different doping levels in series association, with short-circuited gates, each one simulating a GC channel region, we have got a model of the DG GC SOI nMOSFET. Atlas numerical two-dimensional simulations and experimental results are used to validate the proposed model. Good agreement between simulated, modelled and experimental results is found.

机译：在这项工作中，我们介绍了具有渐变沟道（GC）的双栅极（DG）绝缘体上硅（SOI）nMOSFET晶体管的等效串联关联分析模型的开发，该模型在从弱反转到强反转都有效。通过使用文献中可用的DG分析模型，考虑由串联关联的具有不同掺杂水平的两个晶体管代表的等效结构，以及具有短路的栅极，每个栅极模拟一个GC通道区域，我们得到了DG的模型GC SOI nMOSFET。使用Atlas数值二维仿真和实验结果来验证所提出的模型。在模拟，建模和实验结果之间找到了很好的一致性。

著录项

来源
《Microelectronics Technology and Devices-SBMicro 2008》|2008年|177-186|共10页
会议地点 Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR)
作者
Francisco Antonio Lunalvo P. Ferreira; Antonio Cerdeira; Marcelo Antonio Pavanello;
展开▼
作者单位

Department of Electrical Engineering Centro Universitario da FEI Av. Humberto de A. C. Braneo n° 3972 09850-901 - Sao Bernardo do Campo - Brazil;

Seccion de Electronica del Estado Solido (SEES) Av. IPN 2508, Apto. Postal 14-740, 07300 DF, Mexico;

Department of Electrical Engineering Centro Universitario da FEI Av. Humberto de A. C. Braneo n° 3972 09850-901 - Sao Bernardo do Campo - Brazil LSI/PSI/USP, University of Sao Paulo Av. Prof. Luciano Gualberto, trav. 3 n° 158 - 05508-900 - Sao Paulo - Brazil;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;
关键词

相似文献

外文文献
中文文献
专利

1. A charge-based continuous model for submicron graded-channel nMOSFET for analog circuit simulation [J] . Michelly de Souza, Marcelo Antonio Pavanello, Benjamin Iniguez, Solid-State Electronics . 2005,第10期

机译：用于模拟电路仿真的亚微米渐变沟道nMOSFET的基于电荷的连续模型
2. Surface Potential Modeling of Graded-Channel Gate-Stack (GCGS) High-K Dielectric Dual-Material Double-Gate (DMDG) MOSFET and Analog/RF Performance Study [J] . Narendar Vadthiya, Girdhardas Kalola Ankit Silicon . 2018,第6期

机译：分级通道栅极堆叠的表面电位建模（GCG）高k电介质双材料双栅极（DMDG）MOSFET和模拟/射频性能研究
3. Analytical surface potential modeling and simulation of junction-less double gate (JLDG) MOSFET for ultra low-power analog/RF circuits [J] . Roy Nirmal Ch., Gupta Abhinav, Rai Sanjeev Microelectronics journal . 2015,第10期

机译：超低功耗模拟/ RF电路的无结双栅极（JLDG）MOSFET的分析表面电势建模和仿真
4. A Series Association Model For Double Gate Graded-Channel SOI nMOSFET Analog Circuit Simulation [C] . Francisco Antonio Lunalvo P. Ferreira, Antonio Cerdeira, Marcelo Antonio Pavanello Symposium on Microelectronics Technology and Devices . 2008

机译：双栅极分级通道SOI NMOSFET模拟电路模拟的系列关联模型
5. Modeling, fabrication and characterization of double gate MOSFETs for digital and analog/RF circuits applications [D] . Gong, Jingfeng 2008

机译：用于数字和模拟/ RF电路应用的双栅极MOSFET的建模，制造和表征
6. Digital-analog quantum simulation of generalized Dicke models with superconducting circuits [O] . Lucas Lamata -1

机译：具有超导电路的广义Dicke模型的数模量子模拟
7. A Physically Based Compact Model of Partially Depleted SOI MOSFETs for Analog Circuit Simulation [O] . Mike S. L. Lee, Bernard M. Tenbroek, William Redman-white, 2015

机译：用于模拟电路仿真的基于物理的部分耗尽sOI mOsFET的紧凑模型
8. Double-Gate SOI/MOS Devices and Circuits in Hostile Environments [R] . Francis, P. 1996

机译：在恶劣环境中的双栅sOI / mOs器件和电路

A Series Association Model For Double Gate Graded-Channel SOI nMOSFET Analog Circuit Simulation

摘要

著录项

相似文献

相关主题

期刊订阅