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Radiation Effects on Programmed NROM Cells

机译:对编程NROM单元的辐射影响

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NROM type non-volatile memories, having information charge stored in traps in silicon nitride layer, were subjected to different radiation sources in order to ascertain the radiation hardness. Fundamental device parameters, such as threshold voltage shift and current leakages were studied as function of the accumulated dose for gamma (~(60)Co) and Boron ions irradiations to emulate real radiation environments for space and avionics applications. Radiation tolerance of NROM cells was registered with a pronounced degradation for doses exceeding 50 Krad and 1×10~(10) B/cm~2 for gamma and Boron ions irradiations respectively.
机译:使具有存储在氮化硅层中的陷阱中的信息电荷的NROM型非易失性存储器经受不同的辐射源,以确定辐射硬度。研究了基本设备参数(例如阈值电压偏移和电流泄漏)与伽马(〜(60)Co)和硼离子辐射累积剂量的函数关系,以模拟太空和航空电子应用的实际辐射环境。分别超过50 Krad和1×10〜(10)B / cm〜2的剂量分别对γ和硼离子辐射,NROM细胞的辐射耐受性显着降低。

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