Method for programming and erasing an NROM cell

• 1. 最小化对存储器阵列及支持电路的位干扰及电压耐受要求的用于对N沟道金属氧化物半导体电可擦除可编程只读存储器单元阵列进行编程及擦除的方法 [P] . 中国专利： CN102246239B . 2015.08.26
• 2. 最小化对存储器阵列及支持电路的位干扰及电压耐受要求的用于对N沟道金属氧化物半导体电可擦除可编程只读存储器单元阵列进行编程及擦除的方法 [P] . 中国专利： CN102246239A . 2011-11-16
• 3. Programming and erasing methods for a reference cell of an NROM array [P] . 欧洲知识产权局专利： EP1225596B1 . 2007-02-14

  机译： NROM阵列的参考单元的编程和擦除方法

• 4. Programming and erasing methods for a reference cell of an NROM array [P] . 美国专利： US2004027871A1 . 2004-02-12

  机译： NROM阵列的参考单元的编程和擦除方法

• 5. Programming and erasing methods for a reference cell of an NROM array [P] . 欧洲知识产权局专利： EP1225596A3 . 2003-07-23

  机译： NROM阵列的参考单元的编程和擦除方法

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• 1. Immunotherapy against programmed death-1/programmed death ligand 1 in hepatocellular carcinoma: Importance of molecular variations, cellular heterogeneity, and cancer stem cells [J] . Caecilia H C Sukowati ,Korri Elvanita El-Khobar ,Claudio Tiribelli . 世界干细胞杂志:英文版(电子版) . 2021,第7期
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