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首页> 外文会议>Microelectronics Technology and Devices-SBMicro 2008 >Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress
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Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress

机译：应力下具有超薄硅体的先进MOSFET的迁移率建模

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摘要

Mobility in advanced MOSFETs with strained ultra-thin silicon body is investigated. We use a two-band k·p model to describe the subband structure in strained silicon thin films. The model provides the dependence of the conductivity effective mass on strain and film thickness. The conductivity mass decreases along tensile stess in [110] direction applied to a (001) silicon film. This conductivity mass decrease ensures the mobility enhancement in MOSFETs even with extremely thin silicon films. The two-band k·p model also describes the non-parabolicity dependence on film thickness and on strain. Dependence of the non-parabolicity parameter on both film thickness and strain reduces the mobility enhancement due to the conductivity mass modification, especially at higher strain values.
机译：研究了具有应变超薄硅体的先进MOSFET的迁移率。我们使用两带k·p模型来描述应变硅薄膜中的子带结构。该模型提供了电导率有效质量对应变和膜厚的依赖性。施加在（001）硅膜上的电导率质量沿拉伸应力沿[110]方向减小。这种电导率质量的降低即使在极薄的硅膜下也能确保MOSFET迁移率的提高。两带k·p模型还描述了非抛物线对薄膜厚度和应变的依赖性。非抛物线性参数对薄膜厚度和应变的依赖性降低了由于电导率质量的改变而引起的迁移率的提高，特别是在较高的应变值下。

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