首页> 外文会议>Microelectronics Technology and Devices-SBMicro 2008 >ETCHING CHARACTERISTICS AND SURFACE MORPHOLOGY OF NITROGEN-DOPED a-SiC FILMS PREPARED BY RF MAGNETRON SPUTTERING
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ETCHING CHARACTERISTICS AND SURFACE MORPHOLOGY OF NITROGEN-DOPED a-SiC FILMS PREPARED BY RF MAGNETRON SPUTTERING

机译:射频磁控溅射制备掺氮a-SiC薄膜的刻蚀特性和表面形貌

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摘要

Amorphous nitrogen-doped silicon carbide (a-SiC_xN_y) thin films were deposited on Si substrates by RF magnetron sputtering of a SiC target in a N_2+Ar atmosphere. The N_2/Ar flow ratio was adjusted by varying the N_2 flow rate and maintaining constant the Ar flow rate. In order to investigate the influence of N_2/Ar flow ratio on composition, bonding structure, morphology and surface roughness of the deposited films, the following techniques were used: Rutherford backscattering spectroscopy (RBS), Raman spectroscopy and atomic force microscopy (AFM). Moreover, using a reactive ion etching (RIE) system the a-SiC_xN_y samples were etched in SF_6+O_2 gases mixtures. To better understand the variation of the etching rate as a function of the nitrogen content in the film, temporal mass spectrometry analysis of main effluents generated during etching process was performed.
机译:通过在N_2 + Ar气氛中通过SiC靶的RF磁控溅射在Si衬底上沉积非晶氮掺杂的碳化硅(a-SiC_xN_y)薄膜。通过改变N_2流量并保持恒定的Ar流量来调节N_2 / Ar流量比。为了研究N_2 / Ar流量比对沉积膜的组成,键合结构,形貌和表面粗糙度的影响,使用了以下技术:卢瑟福背散射光谱(RBS),拉曼光谱和原子力显微镜(AFM)。此外,使用反应离子蚀刻(RIE)系统在SF_6 + O_2气体混合物中蚀刻a-SiC_xN_y样品。为了更好地理解蚀刻速率随膜中氮含量的变化,对蚀刻过程中产生的主要废水进行了时间质谱分析。

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  • 来源
  • 会议地点 Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR)
  • 作者单位

    Plasmas and Processes Laboratory - Department of Physics, Technological Institute of Aeronautics, S.J. Campos, Brazil;

    Plasmas and Processes Laboratory - Department of Physics, Technological Institute of Aeronautics, S.J. Campos, Brazil;

    Plasmas and Processes Laboratory - Department of Physics, Technological Institute of Aeronautics, S.J. Campos, Brazil;

    Plasmas and Processes Laboratory - Department of Physics, Technological Institute of Aeronautics, S.J. Campos, Brazil;

    Plasmas and Processes Laboratory - Department of Physics, Technological Institute of Aeronautics, S.J. Campos, Brazil;

    Federal University of ABC, UFABC, Santo Andre, Brazil;

    University of Sao Paulo, LSI /EPUSP, Brazil;

    Plasmas and Processes Laboratory - Department of Physics, Technological Institute of Aeronautics, S.J. Campos, B;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 微电子学、集成电路(IC);
  • 关键词

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