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首页> 外文会议>Microelectronics technology and devices - SBMicro 2010 >Cross-Section Features Influence on Surrounding MuGFETs
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Cross-Section Features Influence on Surrounding MuGFETs

机译：截面特征对周围MuGFET的影响

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摘要

Based on the objective of keeping the MOS technology evolution, alternative technologies have been studied and some of them have presented quite interesting results, such as the Silicon-on-Insulator (SOI) one. Characterized by the presence of an insulator layer between the silicon substrate and the transistor active region, SOI devices were initially used mainly in harsh environments, in which low sensitivity to temperature variation (1,2) and high hardness against transient radiation effects are required (3), and have been increasingly used during the last decade for general purpose applications.rnIn spite of the SOI transistors longer life duration, the issue of the charges control in the channel region is still considered a problem for shorter devices. In order to keep the continuous decrease in the MOS transistors dimensions, the academic community is studying the applicability of a multiple gate structure. The multiple gate architecture has presented a better behavior when compared to the single gate one (4,5). Among many observed advantages, it is possible to mention an increase in the transconductance, a better short channel effect and an almost ideal subthreshold slope.
机译：基于保持MOS技术不断发展的目标，已经研究了替代技术，其中一些提出了非常有趣的结果，例如绝缘体上硅（SOI）。 SOI器件的特征是在硅衬底和晶体管有源区之间存在绝缘层，最初主要用于恶劣的环境中，在这种环境中要求对温度变化（1,2）的灵敏度低，并且对瞬态辐射效应的硬度要求高（ 3），并且在过去十年中已被越来越多地用于通用应用。尽管SOI晶体管的使用寿命更长，但对于较短的器件，仍然认为沟道区域中的电荷控制问题仍然存在。为了保持MOS晶体管尺寸的不断减小，学术界正在研究多栅极结构的适用性。与单门（4,5）相比，多门架构具有更好的性能。在许多已观察到的优点中，可以提到跨导的增加，更好的短沟道效应和几乎理想的亚阈值斜率。

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  • 来源
  • 会议地点 Sao Paulo(BR);Sao Paulo(BR)
  • 作者

    M. D. V. Martino; P. G. D. Agopian; J. A. Martino;

  • 作者单位

    LSI / PSI / USP - University of Sao Paulo Av. Prof. Luciano Gualberto, trav. 3, n° 158, 05508-900 - Sao Paulo, SP - Brazil;

    LSI / PSI / USP - University of Sao Paulo Av. Prof. Luciano Gualberto, trav. 3, n° 158, 05508-900 - Sao Paulo, SP - Brazil;

    LSI / PSI / USP - University of Sao Paulo Av. Prof. Luciano Gualberto, trav. 3, n° 158, 05508-900 - Sao Paulo, SP - Brazil;

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  • 正文语种 eng
  • 中图分类 半导体技术;
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