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首页> 外文会议>Microelectronics technology and devices - SBMicro 2010 >Effects of high-energy ion irradiation on the conduction characteristics of HfO_2-based MOSFET devices
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Effects of high-energy ion irradiation on the conduction characteristics of HfO_2-based MOSFET devices

机译：高能离子辐照对HfO_2基MOSFET器件导电特性的影响

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摘要

Silicon dioxide (SiO_2) has been the primary gate insulator material since MOS ICs were first developed. To achieve the scaling levels currently required by advanced IC technologies, the SiO_2 layers in these devices need to be extremely thin to an extent that we have reached the point where electron tunneling through the gate oxide causes prohibitively large increases in power consumption as well as reliability problems. In order to circumvent these limitations, alternative gate insulators with high dielectric constant (high-K) are intensively being exp lored both in academy and industry. One of the most widely investigated high-K dielectrics is by far hafnium oxide (HfO_2), which is already considered more than a promising material. Because of the higher permittivity of HfO_2 (≈25eo) compared to SiO_2 (≈3.9εo), thicker dielectric layers of HfO_2 yield the same capacitances values as thinner SiO 2 films, with the consequent reduction of the tunneling current. This improves the gate control over the channel current and reduces the risk of a premature oxide breakdown caused by the generation of defects.
机译：自从首次开发MOS IC以来，二氧化硅（SiO_2）一直是主要的栅极绝缘体材料。为了达到先进IC技术当前所需的缩放级别，这些器件中的SiO_2层必须非常薄，以至于我们已经达到了通过栅氧化层的电子隧穿导致功耗和可靠性大幅增加的程度。问题。为了克服这些限制，在学术界和工业界都在大量研究具有高介电常数（高K）的替代栅绝缘体。迄今为止，最广泛研究的高K电介质之一是氧化ha（HfO_2），氧化already已被认为不仅仅是一种有前途的材料。由于HfO_2的介电常数（约25eo）比SiO_2（约3.9εo）高，因此，较厚的HfO_2介电层可产生与较薄的SiO 2膜相同的电容值，从而降低了隧穿电流。这改善了对沟道电流的栅极控制，并降低了由缺陷产生引起的氧化物过早击穿的风险。

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