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Optimization of Nanostructured Devices Using Self-consistent Calculations

机译：使用自洽计算优化纳米结构器件

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摘要

The design of several semiconductor devices of high technological content, such as quantum well infrared photodetectors (1), quantum dot infrared photodetector (2), and quantum cascade laser, QCL (3), depends on their bandstructure. The detailed design of the structures responsible for the proper operation of the device is sometimes named band engineering (4).rnThese semiconductor structures are composed by several layers of different semiconductor materials, each one of the order of nanometers of thickness. These layers give origin to a series of heterojunctions in the interfaces due to the mismatch of the crystalline structure of each layer, defining a series of quantum wells and barriers. Usually, the conductivity of these semiconductor structures is increased by doping all or only selected layers. The properties of a giving structure depend on some parameters, such as, the material and thickness of each layer, the number and sequence of layers, and the kind and concentration of doping material used in each layer. In this scale, quantum effects are the responsible for the properties of such structures.
机译：量子阱红外光电探测器（1），量子点红外光电探测器（2）和量子级联激光器QCL（3）等技术含量高的几种半导体器件的设计取决于其能带结构。负责器件正常工作的结构的详细设计有时称为能带工程（4）。这些半导体结构由几层不同的半导体材料组成，每一层的厚度约为纳米级。由于每一层的晶体结构不匹配，这些层在界面中产生了一系列异质结，从而定义了一系列量子阱和势垒。通常，通过掺杂所有或仅选择的层来增加这些半导体结构的电导率。给定结构的性质取决于一些参数，例如，每层的材料和厚度，层的数量和顺序以及每层中使用的掺杂材料的种类和浓度。在这种规模下，量子效应是这种结构性质的原因。

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  • 来源
  • 会议地点 Sao Paulo(BR);Sao Paulo(BR)
  • 作者

    R. Y. Tanaka; A. Passaro; N. M. Abe; A. Muraro Jr.; G. S. Vieira;

  • 作者单位

    Divisao de Física Aplicada, Instituto de Estudos Avan^ados, Sao Paulo, Brasil;

    Divisao de Física Aplicada, Instituto de Estudos Avan^ados, Sao Paulo, Brasil;

    Divisao de Física Aplicada, Instituto de Estudos Avan^ados, Sao Paulo, Brasil;

    Divisao de Física Aplicada, Instituto de Estudos Avan^ados, Sao Paulo, Brasil;

    Divisao de Física Aplicada, Instituto de Estudos Avan^ados, Sao Paulo, Brasil;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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