Modeling of the Inductive Coupled Plasma Discharges

机译：电感耦合等离子体放电的建模

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The Inductively Coupled Plasma (ICP) sources are known for long time, this way of plasma generation was reported back in the 19th century (1). During the 20th century a number of ICP applications were developed, firstly based on high-pressure plasmas, as plasma torches, spectroscopic analysis, and plasma enhanced deposition (2). But only in the 80's the interest on ICP for material processing, mainly in the microelectronic industry, was renewed, taking advantage of ICP capabilities to generate high plasma densities at low gas pressures and low sheath potentials near the surface under treatment. At present, ICP can be considered as the main tool for high density plasma processing (etching and deposition) of materials in microelectronics.

机译：电感耦合等离子体（ICP）源是众所周知的，这种等离子体生成方式早在19世纪就已报道（1）。在20世纪，首先基于高压等离子体，例如等离子体炬，光谱分析和等离子体增强沉积，发展了许多ICP应用（2）。但是直到80年代，人们才重新利用主要用于微电子工业的材料加工ICP的兴趣，利用ICP的功能在低气压下产生高等离子体密度，在被处理表面附近产生低鞘层电势。目前，ICP可被视为微电子中材料的高密度等离子体处理（蚀刻和沉积）的主要工具。

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来源
《Microelectronics technology and devices - SBMicro 2010》|2010年|p.409-415|共7页
会议地点 Sao Paulo(BR);Sao Paulo(BR)
作者
R. Vieira; S. Balashov; S. A. Moshkalev;
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作者单位

Center for Semiconductor Components, State University of Campinas, Campinas, SP,Brazil;

Center for Semiconductor Components, State University of Campinas, Campinas, SP,Brazil;

Center for Semiconductor Components, State University of Campinas, Campinas, SP,Brazil;

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正文语种 eng
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机译：电感耦合等离子体 - 原子发射光谱：氮 - 氩混合物作为等离子体放电气氛的应用评价

Modeling of the Inductive Coupled Plasma Discharges

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