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首页> 外文期刊>Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films >Modeling of inductively coupled plasma Ar/Cl2/N2 plasma discharge: Effect of N2 on the plasma properties
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Modeling of inductively coupled plasma Ar/Cl2/N2 plasma discharge: Effect of N2 on the plasma properties

机译：电感耦合等离子体Ar / Cl2 / N2等离子体放电的建模：N2对等离子体性能的影响

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摘要

A global kinetic model of Cl2/Ar/N2 plasma discharge has been developed, which allows calculation of the densities and fluxes of all neutral and charged species considered in the reaction scheme, as well as the electron temperature, as a function of the operating conditions. In this work, the results from the global model are first compared to the calculations given by other models. Our simulation results are focused on the effect of nitrogen adding to the Cl2/Ar plasma mixture, which impacts both neutral and charged species transport phenomena. The N2 percentage is varied to the detriment of Cl2 by keeping the total flow rates of Cl2 and N2 constant. In order to better understand the impact of N2 addition to the Cl2/Ar gas mixture, the authors analyzed the output plasma parameters calculated from the model for different N2 flow rate percentages. Indeed, the simulation results show a decrease in electron density and an increase in electron temperature with increasing percentage of N2. Particular attention is paid to the analysis of electronegativity, Cl2 and N2 dissociation, and positive ion to neutral flux ratio evolution by varying percentage of N2. Such parameters have a direct effect on the etching anisotropy of the materials during the etching process.
机译：已开发了Cl2 / Ar / N2等离子体放电的全局动力学模型，该模型可以计算反应方案中考虑的所有中性和带电物种的密度和通量，以及电子温度随操作条件的变化。在这项工作中，首先将全局模型的结果与其他模型给出的计算结果进行比较。我们的模拟结果集中在氮添加到Cl2 / Ar等离子体混合物中的影响上，这会影响中性和带电物种的迁移现象。通过使Cl2和N2的总流速保持恒定，可以改变N2的百分比，从而损害Cl2。为了更好地理解将N2添加到Cl2 / Ar气体混合物中的影响，作者分析了从模型针对不同的N2流量百分比计算出的输出等离子体参数。实际上，模拟结果表明，随着N2百分比的增加，电子密度降低，电子温度升高。尤其要注意通过改变N2百分比来分析电负性，Cl2和N2解离以及正离子与中性通量之比的演变。这些参数对蚀刻过程中材料的蚀刻各向异性具有直接影响。

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