Analysis of UTBOX IT-DRAM Memory Cell at High Temperatures

机译：UTBOX IT-DRAM高温存储单元分析

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This work investigates the behavior of Ultra Thin BOX (UTBOX) FDSOI devices used as a memory cell IT-DRAM (single transistor dynamic random access memory) at high temperatures through 2D numerical simulations. The minimum drain voltage for the onset of the bipolar junction transistor (BJT) effect (V_(Latch)) was obtained for various buried oxide thickness (t_(box)) and silicon film thickness (t_(Si)). The simulation results clearly show that, when temperature increases, the V(Latch), the sense margin current (ΔI_(SENSE)), the latch time (t_(Latch)) and the retention time decreases.

机译：这项工作通过二维数值模拟研究了高温下用作存储单元IT-DRAM（单晶体管动态随机存取存储器）的超薄BOX（UTBOX）FDSOI器件的性能。对于各种掩埋氧化物厚度（t_（box））和硅膜厚度（t_（Si）），获得了双极性结晶体管（BJT）效应（V_（Latch））产生的最小漏极电压。仿真结果清楚地表明，当温度升高时，V（Latch），检测裕量电流（ΔI_（SENSE）），锁存时间（t_（Latch））和保持时间会减少。

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来源
《Microelectronics technology and devices - SBMicro 2011》|2011年|p.61-68|共8页
会议地点 Joao Pessoa(BR);Joao Pessoa(BR)
作者
L. M. Almeida; K. R. A. Sasaki; M. Aoulaiche; E. Simoen; C. Claeys; J. A. Martino;
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LSI/PSI/USP, University of Sao Paulo, Av. Prof. Luciano Gualberto, trav.3, n°158, CEP: 05508-010, Sao Paulo, Brazil;

LSI/PSI/USP, University of Sao Paulo, Av. Prof. Luciano Gualberto, trav.3, n°158, CEP: 05508-010, Sao Paulo, Brazil;

imec, Kapeldreef 75, B-3001 Leuven, Belgium;

imec, Kapeldreef 75, B-3001 Leuven, Belgium;

imec, Kapeldreef 75, B-3001 Leuven, Belgium,E.E. Dept., KULeuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium;

LSI/PSI/USP, University of Sao Paulo, Av. Prof. Luciano Gualberto, trav.3, n°158, CEP: 05508-010, Sao Paulo, Brazil;

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Analysis of UTBOX IT-DRAM Memory Cell at High Temperatures

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