Influence of Proton Irradiation in Bulk and DTMOS Triple Gate FinFETs

机译：体和DTMOS三栅极FinFET中质子辐照的影响

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

In this paper, the influence of proton irradiation is experimentally studied in triple gate Bulk FinFETs with and without Dynamic Threshold MOS configuration (DTMOS). The drain current, transconductance and Drain Induced Barrier Lowering (DIBL) will be compared in the DT mode and the standard biasing configuration. Moreover, the important figures of merit for the analog performance such as transconductance-over-drain current, output conductance and intrinsic voltage gain will be studied. The results indicate that the DTMOS FinFET structure shows superior electrical characteristics and a better analog performance before and after irradiation.

机译：在本文中，在具有和不具有动态阈值MOS配置（DTMOS）的三栅极大容量FinFET中，通过实验研究了质子辐照的影响。将在DT模式和标准偏置配置下比较漏极电流，跨导和漏极引起的势垒降低（DIBL）。此外，还将研究模拟性能的重要指标，例如跨导-漏电流，输出电导和固有电压增益。结果表明，DTMOS FinFET结构在辐照之前和之后显示出优异的电气特性和更好的模拟性能。

著录项

来源
《Microelectronics technology and devices - SBMicro 2011》|2011年|p.247-254|共8页
会议地点 Joao Pessoa(BR);Joao Pessoa(BR)
作者
M. G. C. Andrade; J. A. Martino; M. Aoulaiche; N. Collaert; A. Mercha; E. Simoen; C. Claeys;
展开▼
作者单位

Imec, Kapeldreef 75, B-3001 Leuven, Belgium,ISI/PSI/USP, University of Sao Paulo, Av. Prof. L. G., trav. 3, n.158,05508-010 Sao Paulo, Brazil;

ISI/PSI/USP, University of Sao Paulo, Av. Prof. L. G., trav. 3, n.158,05508-010 Sao Paulo, Brazil;

Imec, Kapeldreef 75, B-3001 Leuven, Belgium;

imec, Kapeldreef 75, B-3001 Leuven, Belgium;

Imec, Kapeldreef 75, B-3001 Leuven, Belgium;

imec, Kapeldreef 75, B-3001 Leuven, Belgium;

Imec, Kapeldreef 75, B-3001 Leuven, Belgium,E.E. Dept. KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类半导体技术;
关键词

相似文献

外文文献
中文文献
专利

1. Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation [J] . Maria Gloria Cano de Andrade, Joao Antonio Martino, Marc Aoulaiche, Microelectronics & Reliability . 2014,第11期

机译：60 MeV质子辐照下的体和DTMOS三栅极器件的研究
2. Behavior of triple-gate Bulk FinFETs with and without DTMOS operation [J] . Maria Gloria Cano de Andrade, Joao Antonio Martino, Marc Aoulaiche, Solid-State Electronics . 2012,第期

机译：具有和不具有DTMOS操作的三栅极大容量FinFET的行为
3. Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view [J] . Agopian P. G. D., Torres H. L. F., Martino J. A., Semiconductor science and technology . 2019,第6期

机译：从TID角度比较质子辐照三栅极SOI TFET和鳍片
4. Influence of Proton Irradiation in Bulk and DTMOS Triple Gate FinFETs [C] . M. G. C. Andrade, J. A. Martino, M. Aoulaiche, Symposium on Microelectronics Technology and Devices . 2011

机译：质子辐射在散装和DTMOS三栅鳍片中的影响
5. A triple-moment bulk hail microphysics scheme to investigate the sensitivities of hail to aerosols. [D] . Loftus, Adrian Matthew. 2012

机译：三重矩散装冰雹微观物理学方案，用于研究冰雹对气溶胶的敏感性。
6. Electrical characteristic fluctuation of 16-nm-gate high-κ/metal gate bulk FinFET devices in the presence of random interface traps [O] . Sheng-Chia Hsu, Yiming Li 2014

机译：在存在随机界面陷阱的情况下16nm栅极高κ/金属栅极体FinFET器件的电特性波动
7. Analog performance at room and low temperature of triple-gate devices: Bulk, DTMOS, BOI and SOI [O] . M. G. C. Andradea, J. A. Martinoa, E. Simoenb, 2016

机译：三栅极器件在室温和低温下的模拟性能：Bulk，DTmOs，BOI和sOI

Influence of Proton Irradiation in Bulk and DTMOS Triple Gate FinFETs

摘要

著录项

相似文献

相关主题

期刊订阅