A Compact Model and an Extraction Method for the FinFET Spreading Resistance

机译：FinFET扩展电阻的紧凑模型和提取方法

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This work presents a study of the FinFET series resistance focused on the spreading component. A new simple analytical expression is proposed to easily estimate and model this parasitic parameter. The extraction method departs from the drain current versus gate voltage curves of several channel and source/drain lengths. The resistance values extracted from simulated devices are compared to the outputs of the analytic model and a very good agreement is achieved. The proposed model showed accurate estimative for a wider range of devices then previously published models.

机译：这项工作提出了针对FinFET串联电阻的研究，重点是扩展元件。提出了一种新的简单解析表达式来轻松估算和建模该寄生参数。提取方法不同于几种沟道长度和源极/漏极长度的漏极电流与栅极电压的关系曲线。从仿真设备中提取的电阻值与分析模型的输出进行比较，并获得了很好的一致性。与先前发布的模型相比，该模型对更广泛的设备显示出准确的估算值。

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来源
《Microelectronics technology and devices - SBMicro 2011》|2011年|p.255-262|共8页
会议地点 Joao Pessoa(BR);Joao Pessoa(BR)
作者
M.G.O. Parada; C. T. Malheiro; P.G.D. Agopian; R. Giacomini;
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作者单位

Centra Universitario da FEI, Av. Humberto de Alencar Castelo Branco, 3972, Sao Bernardo do Campo, Sao Paulo, 09850-901, Brazil;

Centra Universitario da FEI, Av. Humberto de Alencar Castelo Branco, 3972, Sao Bernardo do Campo, Sao Paulo, 09850-901, Brazil;

Centra Universitario da FEI, Av. Humberto de Alencar Castelo Branco, 3972, Sao Bernardo do Campo, Sao Paulo, 09850-901, Brazil;

Centra Universitario da FEI, Av. Humberto de Alencar Castelo Branco, 3972, Sao Bernardo do Campo, Sao Paulo, 09850-901, Brazil;

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正文语种 eng
中图分类半导体技术;
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1. FinFET Centric Variability-Aware Compact Model Extraction and Generation Technology Supporting DTCO [J] . Wang Xingsheng, Cheng Binjie, Reid David, Electron Devices, IEEE Transactions on . 2015,第10期

机译：支持DTCO的FinFET中心变量感知紧凑模型提取和生成技术
2. Extraction of Substrate Resistance in Bulk FinFETs Through RF Modeling [J] . Jung J.-H., Lee J.-H. IEEE microwave and wireless components letters . 2007,第5期

机译：通过射频建模提取块状FinFET中的衬底电阻
3. A Predictive 3-D Source/Drain Resistance Compact Model and the Impact on 7 nm and Scaled FinFETs [J] . Wu Tao, Luo Haowen, Wang Xingsheng, IEEE Transactions on Electron Devices . 2020,第6期

机译：预测的3-D源/漏极电阻紧凑型模型及其对7 NM和缩放的FinFET的影响
4. A Compact Model and an Extraction Method for the FinFET Spreading Resistance [C] . M. G. O. Parada, C. T. Malheiro, P. G. D. Agopian, Symposium on Microelectronics Technology and Devices . 2011

机译：一种紧凑的模型和用于散射电阻的萃取方法
5. Compact modeling of experimental N- and P-channel finFETs. [D] . Song, Jooyoung. 2010

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7. FinFET centric variability-aware compact model extraction and generation technology supporting DTCO [O] . Wang, Xingsheng, Cheng, Binjie, Reid, David, 2015

机译：支持DTCO的FinFET中心可变性感知紧凑模型提取和生成技术

A Compact Model and an Extraction Method for the FinFET Spreading Resistance

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