Structural characterization of Si_(1-x)C_x nanolayers synthesized by C Implantation into SiO_2/Si

机译：通过碳注入到SiO_2 / Si中合成的Si_（1-x）C_x纳米层的结构表征

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We report the conversion of Si layer in 40 nm SiC by 40 keV carbon (C) implantation into SiO_2/Si structure. SiC layer is revealed to the sample surface after final SiO_2 etching. Two distinct methods were carried out: a) by sequential C implantations followed by 1250℃ annealing after each implantation step (under a flux consisting of a mixture of 99% Ar with 1% O_2) and, b) by single-step implantation followed by the same annealing. Rutherford Backscattering Spectrometry was employed to measure layer composition evolution after each sequential implantation step and annealing. Transmission electron microscopy (TEM) has shown that single-step implantation, up to the same minimum fluence, results in better structural quality and granular nature layer in the case of sequential synthesis

机译：我们报道了通过40 keV碳（C）注入SiO_2 / Si结构将40 nm SiC中的Si层转化。最终SiO_2蚀刻后，SiC层暴露在样品表面。进行了两种不同的方法：a）依次进行C注入，然后在每个注入步骤之后（在由99％Ar与1％O_2组成的混合物组成的助熔剂下）进行1250℃退火；以及b）单步注入，然后进行同样的退火。在每个顺序的注入步骤和退火之后，使用卢瑟福背散射光谱法测量层组成的演变。透射电子显微镜（TEM）显示，在连续合成的情况下，单步注入达到相同的最小通量，可获得更好的结构质量和颗粒性质的层

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《Microelectronics technology and devices - SBMicro 2011》|2011年|p.95-101|共7页
会议地点 Joao Pessoa(BR);Joao Pessoa(BR)
作者
R.M.S dos Reis; R.L. Maltez; H. Boudinov;
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作者单位

Institute de Fisica, UFRGS, C.P. 15051, 91501-970, Porto Alegre-RS, Brazil;

Institute de Fisica, UFRGS, C.P. 15051, 91501-970, Porto Alegre-RS, Brazil;

Institute de Fisica, UFRGS, C.P. 15051, 91501-970, Porto Alegre-RS, Brazil;

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正文语种 eng
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Structural characterization of Si_(1-x)C_x nanolayers synthesized by C Implantation into SiO_2/Si

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