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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >The effect of structural and chemical bonding changes on the optical properties of Si /Si_(1-x)C_x core/shell nanowires
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The effect of structural and chemical bonding changes on the optical properties of Si /Si_(1-x)C_x core/shell nanowires

机译：结构和化学键变化对Si / Si_（1-x）C_x核/壳纳米线光学性能的影响

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摘要

Si/Si_(1-x)C_xcore/shell nanowires (CS NWs) were synthesized. First,a Si NW was grown via a Vapor-Liquid-Solid (VLS) procedure using Au as a catalyst. Next, a Si_(1-x)C_X shell was deposited by a chemical vapor deposition (CVD) method after the removal of the Au tip at the top of the Si NW. We investigated the physical, chemical, and optical properties of the Si/Si_(1-x)C_x CS NWs as a function of annealing temperature. The Si_(1-x)C_x shell was initially deposited on the Si core with small clusters of an amorphous state, which were remarkably transformed into larger clusters by recrystallization after annealing under vacuum. To relieve the strain induced by the huge difference between the atomic sizes of Si and C, substitutionally incorporated C atoms can combine with another C atom at the third-nearest-neighbor distance in the Si_(1-x)C_X shell with increasing annealing temperature. Furthermore, the THz pulse emitted from the Si/Si_(1-x)C_x, CS NWs was observed and analyzed. In the case of annealing treatment at 600 °C, the THz pulse intensity was substantially increased, which is not ascribed to Drude absorption but to mid-IR absorption. Moreover, based on the simulation results, we suggest that the existence of substitutional C atoms and control of the shell thickness is a viable method to enhance the THz pulse amplitude.
机译：合成了Si / Si_（1-x）C_x核/壳纳米线（CS NWs）。首先，通过使用Au作为催化剂的汽液固（VLS）程序生长Si NW。接下来，在去除Si NW顶部的Au尖端之后，通过化学气相沉积（CVD）方法沉积Si_（1-x）C_X壳。我们研究了Si / Si_（1-x）C_x CS NWs的物理，化学和光学性质随退火温度的变化。首先将Si_（1-x）C_x壳沉积在具有非晶态小簇的Si核上，然后在真空退火后通过重结晶将其显着转变为更大的簇。为了缓解由Si和C原子尺寸之间的巨大差异引起的应变，随着退火温度的升高，取代结合的C原子可以在Si_（1-x）C_X壳中的第三近邻距离处与另一个C原子结合。 。此外，观察并分析了从Si / Si_（1-x）C_x，CS NWs发射的太赫兹脉冲。在600°C下进行退火处理的情况下，THz脉冲强度显着增加，这不是归因于Drude吸收，而是归因于中红外吸收。此外，根据模拟结果，我们认为存在取代的C原子并控制壳的厚度是提高THz脉冲幅度的可行方法。

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