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Structural characterization of annealed Si_(1-x)C_x/SiC multilayers targeting formation of Si nanocrystals in a SiC matrix

机译:旨在在SiC基质中形成Si纳米晶体的退火Si_(1-x)C_x / SiC多层膜的结构表征

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摘要

Amorphous Si_(1-x)C_x/SiC multilayer films were prepared by alternating deposition of Si-rich Si_(1-x)C_x and near-stoichiometric SiC layers by using magnetron sputtering. The as-deposited films were annealed at different temperatures (T_a) from 800 to 11
机译:通过使用磁控溅射交替沉积富硅的Si_(1-x)C_x和接近化学计量的SiC层来制备非晶Si_(1-x)C_x / SiC多层膜。所沉积的薄膜在800至11的不同温度(T_a)下退火

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