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首页> 外文会议>Microelectronics technology and devices - SBMicro 2011 >Characterization of Thin-Film SOI PIN Diodes from Cryogenic to Above Room Temperatures Using an Explicit I-V Multi-Branch Model
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Characterization of Thin-Film SOI PIN Diodes from Cryogenic to Above Room Temperatures Using an Explicit I-V Multi-Branch Model

机译：使用显式I-V多分支模型表征从低温到室温以上的SOI PIN薄膜二极管

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摘要

A multi-branch model is proposed to describe multiple conduction mechanisms in thin-film SOI PIN diodes with parasitic series resistance over a wide operating temperature range, from 90 to 390 K. The model is composed of the parallel combination of three branches, each of them incorporating a diode and a series resistance. The model's unique advantage is its explicit nature which allows the terminal current to be continuously expressed as an explicit analytical function of the applied terminal voltage. The resulting explicit equation is convenient for repetitive simulation applications as well as for analytic differentiation and integration, in contrast to conventional models which only allow numerical solutions. The model's suitability has been assessed by parameter extraction and subsequent playback on real SOI PIN diode forward I- V characteristics.
机译：提出了一个多分支模型来描述薄膜SOI PIN二极管在90至390 K的宽工作温度范围内具有寄生串联电阻的多种传导机制。该模型由三个分支的并联组合组成，每个分支它们包含一个二极管和一个串联电阻。该模型的独特优势是其显式特性，该特性允许将端子电流连续表示为所施加端子电压的显式解析函数。与仅允许数值解的常规模型相比，所生成的显式方程式便于重复仿真应用以及分析微分和积分。该模型的适用性已通过参数提取以及随后在真实SOI PIN二极管正向I-V特性上的回放进行了评估。

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  • 来源
  • 会议地点 Joao Pessoa(BR);Joao Pessoa(BR)
  • 作者

    Denise Lugo-Munoz; Juan Muci; Adelmo Ortiz-Conde; Francisco J. Garcfa-Sanchez; Michelly de Souza; Denis Flandre; Marcelo A. Pavanello;

  • 作者单位

    Solid-State Electronics Laboratory, Simon Bolivar University, Caracas 1080, Venezuela;

    Solid-State Electronics Laboratory, Simon Bolivar University, Caracas 1080, Venezuela;

    Solid-State Electronics Laboratory, Simon Bolivar University, Caracas 1080, Venezuela;

    Solid-State Electronics Laboratory, Simon Bolivar University, Caracas 1080, Venezuela;

    Department of Electrical Engineering, Centre Universitario da FEI, Sao Bernardo do Campo, SP, Brazil;

    Electrical Engineering Department, ICTEAM Institute, Universite Catholique de Louvain, Louvain-la-Neuve, Belgium;

    Department of Electrical Engineering, Centre Universitario da FEI, Sao Bernardo do Campo, SP, Brazil;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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