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Endpoint Detection Methods for Time Division Multiplex Etch Processes

机译：时分复用蚀刻工艺的端点检测方法

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During the fabrication of many MEMs devices it is required to etch a layer of material to completion stopping on the layer below (e.g. Silicon on Insulator (SOI) - clearing a Si layer stopping on an underlying silicon dioxide layer). Allowing the etch process to proceed beyond the time when the first layer has been removed can result in reduced thickness of the underlying stop layer, or feature profile degradation (known as "notching" for SOI applications). One method commonly used to detect plasma process termination times is optical emission spectrometry (OES). OES analyzes the light emitted from a plasma source to draw inferences about the chemical and physical state of the plasma process. In semiconductor processing this technique is commonly used to detect material interfaces during plasma etch processes. While this approach works well for single step processes or process with a limited number of discrete etch steps (such as an etch initiation followed by a main etch) it is difficult to apply OES techniques to plasma processes with rapid and periodic plasma perturbations such as time division multiplex (TDM) plasma etching processes for Si etching. At Unaxis USA, we have developed a proprietary optical emission end point algorithm in conjunction with OES to detect material transitions in TDM processes. This technique requires no synchronization of the algorithm to the TDM process and has been applied to silicon on insulator (SOI) structures. The mechanism and performance of the algorithm will be discussed. The sensitivity of the technique has been evaluated over a range of silicon etch loads. Signal to Noise (SNR) ratios of greater than 15:1 have been achieved for samples with less than 10% exposed silicon.
机译：在制造许多MEMs器件的过程中，需要蚀刻一层材料以完全停止在下面的层上（例如，绝缘体上硅（SOI）-清除停止在下面的二氧化硅层上的Si层）。允许蚀刻过程进行到除去第一层之后的时间，可以导致下面的停止层的厚度减小，或导致特征轮廓退化（对于SOI应用称为“缺口”）。通常用于检测等离子体工艺终止时间的一种方法是光发射光谱法（OES）。 OES分析从等离子体源发出的光，以推断出等离子体过程的化学和物理状态。在半导体加工中，该技术通常用于检测等离子体蚀刻过程中的材料界面。尽管这种方法对于单步工艺或具有有限数量的离散蚀刻步骤的工艺（例如蚀刻开始后进行主蚀刻）非常有效，但难以将OES技术应用于具有快速且周期性的等离子体扰动（例如时间）的等离子体工艺硅蚀刻的TDM等离子体蚀刻工艺。在美国Unaxis，我们与OES一起开发了专有的光学发射终点算法，以检测TDM工艺中的材料转变。该技术不需要使算法与TDM工艺同步，并且已应用于绝缘体上硅（SOI）结构。将讨论该算法的机制和性能。该技术的灵敏度已经在一系列硅蚀刻负载上进行了评估。对于暴露硅含量少于10％的样品，信噪比（SNR）已达到15：1以上。

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