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首页> 外文会议>Micromachining and microfabrication process technology XIX >Calibrating bimetallic grayscale photomasks to photoresist response for precise micro-optics fabrication
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Calibrating bimetallic grayscale photomasks to photoresist response for precise micro-optics fabrication

机译：校准双金属灰度光掩模以响应光致抗蚀剂，以实现精确的微光学制造

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摘要

Microfabricating high resolution micro-optics structures requires shape control to ＜1/8th wavelength (～60nm) in both vertical and horizontal surface precision. Grayscale bimetallic photomasks are bi-layer thermal resists consisting of two thin layers of Bi-on-Indium or Tin-on-Indium. A focused laser spot creates a thermal metal oxide with a controllably transparency set by the beam power of optical density from ～3OD (unexposed) to ＜0.22OD (fully exposed). A direct-write raster-scan photomask laser system with a CW Argon-ion laser at 514nm for the bimetallic writing and 457nm line for measuring the OD change used a feedback-controlled Gaussian beam to achieve 256-level grayscale masks. Setting the graylevels required to achieve uniform vertical steps in the photoresist requires adjustment in transparency based on the exact response curves of a given resist/development process. An initial model is developed using the classic resist threshold dose exposure D_0 and dose to clear D_c creating a power law relation between the required exposure dose for each thickness step and the mask transparency. However real resists behave differently than the simple model near the threshold requiring careful calibrating of mask graylevel transparencies with the photoresist response curve for a given resist/development process. Test structures ranging from steps to ramps and complex patterns were examined via both SEM and profilometry from the resulting bimetallic grayscale masks. Secondary corrections modify the needed bimetallic OD due to the exposure source spectrum differences from the 457nm measurement. This enhances the patterning of micro-optic and 3D MEMS structures.
机译：微细加工高分辨率微光学结构需要在垂直和水平表面精度上将形状控制在＜1/8波长（〜60nm）。灰度双金属光掩模是由两层铟对铟或铟对锡构成的双层热抗蚀剂。聚焦的激光点产生的热金属氧化物具有可控制的透明性，该透明性由光密度从〜3OD（未曝光）到＜0.22OD（完全曝光）的光束功率设定。一种直接写入光栅扫描光掩模激光器系统，在514nm处使用CW氩离子激光器进行双金属写入，在457nm处测量OD变化，使用了反馈控制的高斯光束以实现256级灰度掩模。设置在光致抗蚀剂中实现均匀垂直台阶所需的灰度级需要基于给定的抗蚀剂/显影过程的精确响应曲线来调整透明度。使用经典抗蚀剂阈值剂量曝光D_0和清除D_c的剂量来开发初始模型，从而在每个厚度步骤所需的曝光剂量与掩模透明度之间建立幂律关系。然而，对于给定的抗蚀剂/显影工艺，实际抗蚀剂在阈值附近的行为与简单模型不同，需要使用光致抗蚀剂响应曲线仔细校准掩模灰度级透明度。通过扫描电子显微镜（SEM）和轮廓测量法，从所得的双金属灰度掩模中检查了从阶梯到斜面以及复杂图案的测试结构。由于457nm测量的曝光源光谱差异，二次校正会修改所需的双金属OD。这增强了微光学和3D MEMS结构的图案化。

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