Fabrication of Ge On Insulator By Ion-Implantation And Dry Oxidation Techniques

著录项

• 来源
  《Microscopy Society of America Annual Meeting;Microanalysis Society Annual meeting;International Metallographic Society Annual meeting》|2012年|1634-1635|共2页
• 会议地点 Phoenix AZ(US)
• 作者

  T.-H. Kim; K. Belay; D.J. Llewellyn; R.G. Elliman; D.-Y. Choi; B. Luther-Davies;

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• 作者单位

  Electronic Materials Engineering Department, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200 Australia;

  rnElectronic Materials Engineering Department, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200 Australia;

  rnElectronic Materials Engineering Department, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200 Australia Centre for Advanced Microscopy, R.N. Robertson Building, Australian National University, Canberra, ACT 0200 Australia;

  rnElectronic Materials Engineering Department, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200 Australia;

  rnLaser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200 Australia;

  rnLaser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200 Australia;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
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