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Optical properties of anti-phase boundaries and frenkel-type defects in CuPt-ordered GaInP studied by optical spectroscopy in a transmission electron microscope

机译：透射电子显微镜中的光谱研究CuPt有序GaInP的反相边界和弗伦克尔型缺陷的光学性质

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Optical properties of anti-phase boundaries (APBs) adn Frenkel-pairs (FPs) in CuPt-ordered GaInP has been examined by in-situ photoluminescence and cathodoluminescence spectroscopy in a transmission electron microscope.We have found:1) the decrease of the band gap energy E_g with decreasing the APB density and 2) three APB luminescence bands peaking at the photon energy of about E_g-8,E_g-18,and E_g-30 meV,respectively.We have shown that the FPs on the Ga adn In sublattices,generated by electron-irradition,act as nonradiative recombination centers.

机译：通过透射电子显微镜中的原位光致发光和阴极发光光谱研究了CuPt有序GaInP中反相边界（APBs）和Frenkel对（FPs）的光学性质。我们发现：1）谱带的减小间隙能E_g随APB密度的降低而降低）2）三个APB发光带分别在约E_g-8，E_g-18和E_g-30 meV的光子能量处达到峰值。由电子辐射产生的α，充当非辐射复合中心。

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《Microscopy of semiconducting materials 1999》|1999年|p.175-178|共4页
会议地点 Oxford(GB);Oxford(GB)
作者
Y Ohno; S Tadeka;
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正文语种 eng
中图分类机械、仪表工业;
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Optical properties of anti-phase boundaries and frenkel-type defects in CuPt-ordered GaInP studied by optical spectroscopy in a transmission electron microscope

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