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TEM and AFM studies of selectively etched Si specimens to determine 2-D dopant profiles associated with n~+-P junctions

机译：TEM和AFM研究选择性腐蚀的Si样品以确定与n〜+ -P结相关的2-D掺杂剂分布

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The etching/TEM and etching/AFM methods for determining 2-D dopant concentration depth profiles are applied to n~+ -P junctions in silicon.The work includes the use of an independent etch rate vs. dopant concentration calibration curve,comparisons by using the two methods on the same specimens and the application of hte methods to junction depths down to 60 nm.The TEM method gave good results while the AFM method requires further development.

机译：确定硅中n〜+ -P结的刻蚀/ TEM和刻蚀/ AFM方法可用于确定硅中的n〜+ -P结。工作包括使用独立的刻蚀速率与掺杂剂浓度的校准曲线，通过使用两种方法在相同的样品上进行，并应用hte方法将结深降至60nm。TEM方法取得了良好的结果，而AFM方法则需要进一步发展。

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《Microscopy of semiconducting materials 1999》|1999年|p.487-490|共4页
会议地点 Oxford(GB);Oxford(GB)
作者
K D Yoo; C D Marsh; G R Booker;
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正文语种 eng
中图分类机械、仪表工业;
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TEM and AFM studies of selectively etched Si specimens to determine 2-D dopant profiles associated with n~+-P junctions

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