• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Nano- and Microelectromechanical Systems (NEMS and MEMS) and Molecular Machines >Fabrication of Micromachined Piezoelectric Diaphragm Pumps Actuated by Interdigitated Transducer Electrodes
【24h】

Fabrication of Micromachined Piezoelectric Diaphragm Pumps Actuated by Interdigitated Transducer Electrodes

机译：叉指换能电极驱动的微机械压电隔膜泵的制造

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Micromachined pump structures were fabricated using surface micromachining. The structures consisted of three or five connected chambers. Sequential actuation of the diaphragms on these chambers will yield peristaltic pumping. As the actuation material, lead zirconate titanate (PZT [53/47]) thin films were employed and actuated by interdigitated transducer (IDT) electrodes. First, chambers and channels on the 4" (100) silicon wafers were defined by reactive ion etching (RIE) and thermally oxidized. The etched structures were then filled with amorphous silicon. Low temperature (silicon) oxide (LTO) and PZT films were then deposited. The LTO and PZT layers act as passive and active layers in a piezoelectric unimorph, respectively. A ZrO_2 layer was employed to prevent reaction between SiO_2 and PZT layers. A Cr/Au electrode was evaporated on top of the PZT layer and patterned into ring-shaped IDT electrodes. Finally, a porthole at each end of the pump structures was defined by ion milling and the whole micropump structure was released by removing the sacrificial amorphous silicon using XeF_2. Completely released 500 μm diameter pump structures were fabricated. The remanent polarizations of the PZT films on released diaphragms were ～20 μC/cm~2 and their coercive fields were ～50 kV/cm. 500 μm diameter diaphragms were deflected as much as 2 μm with 120 V applied. The shape and behavior of the diaphragm deflection can be explained by considering both d_(31) and d_(33) piezoelectric coefficients of the PZT films.
机译：使用表面微加工来制造微机械泵结构。结构由三个或五个相连的腔室组成。这些腔室上的隔膜的顺序驱动将产生蠕动泵送。作为致动材料，采用锆钛酸铅（PZT [53/47]）薄膜，并由叉指式换能器（IDT）电极致动。首先，通过反应离子刻蚀（RIE）定义4''（100）硅晶片上的腔室和通道并进行热氧化。然后在刻蚀的结构中填充非晶硅。制作低温氧化硅（LTO）和PZT膜LTO和PZT层分别作为压电单压电晶片的被动层和有源层，采用ZrO_2层防止SiO_2和PZT层之间的反应，Cr / Au电极在PZT层的顶部蒸发并构图最后，通过离子铣削在泵浦结构的每个端部定义一个孔，并通过使用XeF_2去除牺牲非晶硅来释放整个微泵浦结构，制造出完全释放的直径500μm的泵浦结构。释放的膜片上PZT膜的剩余极化率为〜20μC/ cm〜2，矫顽场为〜50 kV / cm。直径为500μm的膜片在120 V电压下偏转了2μm。 ed。可以通过同时考虑PZT膜的d_（31）和d_（33）压电系数来解释膜片挠度的形状和行为。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号