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Hybrid Integration of Ⅲ-Ⅴ Optoelectronic Devices on Si Platform Using BCB

机译：使用BCB在硅平台上将Ⅲ-Ⅴ光电器件混合集成

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摘要

Integration of dense arrays of high frequency Ⅲ-Ⅴ photoemitters and photodetectors with Si platform is one of the challenging tasks for realization of novel chip-level optical interconnects. These interconnects require the resolution of numerous problems of compatibility of materials. Comparison of monolithic and hybrid integration technologies highlights the advantages of hybrid approaches for emitters highly sensitive to growth defects. A novel protocol for fabrication of Ⅲ-Ⅴ optoelectronic components on a Si platform is proposed. Reversed vertical cavity surface emitting laser (VCSEL) structures were grown homoepitaxialy by MBE on a GaAs substrate, and then bonded to a Si wafer using a benzocyclobutene (BCB) polymer. The GaAs substrate was subsequently removed by selective etching down to an AlAs etch stop layer. This reduces thermal stresses in order to enhance the optoelectronic device performance and increase lifetime. A 10 μm-thick high frequency VCSEL with coplanar metallization is processed on Si with PMGI reflow planarization. Electro-luminescence spectrum, Ⅰ-Ⅴ and P-T characteristics were measured and compared with a reference structure. It was found that measured thermal resistance is about five times higher than for devices on a host GaAs wafer.
机译：高频Ⅲ-Ⅴ光电发射器和光电探测器的密集阵列与Si平台的集成是实现新型芯片级光学互连的一项艰巨任务。这些互连要求解决材料兼容性的许多问题。单片和混合集成技术的比较凸显了混合方法对于对生长缺陷高度敏感的发射极的优势。提出了一种在Si平台上制造Ⅲ-Ⅴ类光电元件的新协议。反向垂直腔表面发射激光器（VCSEL）结构通过MBE在GaAs衬底上同质外延生长，然后使用苯并环丁烯（BCB）聚合物粘结到Si晶片上。随后通过选择性蚀刻向下至AlAs蚀刻停止层来去除GaAs衬底。这减小了热应力，从而增强了光电器件的性能并延长了使用寿命。具有共面金属化层的10μm厚高频VCSEL在具有PMGI回流平面化的Si上进行处理。测量了电致发光光谱，Ⅰ-Ⅴ和P-T特性，并与参考结构进行了比较。已经发现，测得的热阻大约是在主机GaAs晶片上的器件的五倍。

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