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The Improvement of Temperature Coefficient of Frequency in Thin Film Bulk Acoustic Wave Resonator using Secondary Harmonics

机译:利用二次谐波改善薄膜体声波谐振器频率温度系数

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We have succeeded in making an 870MHz-range thin film bulk acoustic wave (BAW) resonator that has a small temperature coefficient of frequency (TCF) using secondary harmonics. The 870MHz-range BAW resonator has been requested to have nearly zero TCF, because it will be used in an oscillator for remote keyless entry systems. The BAW resonator has composite structure that consists of Al electrodes and ZnO/SiO_2. We directed our attention to the fact that ZnO and Al have negative TCF, and SiO_2 has a positive one. It is theoretically possible to make zero TCP BAW resonators by optimizing the thickness ratio of ZnO and SiO_2. However, using fundamental resonance, TCF is so sensitive to the thickness ratio that it cannot be easily controlled by MEMS techniques. We found in finite element method simulation and confirmed by experiment that the TCF of secondary harmonics has a local minimum when changing the ZnO/SiO_2 thickness ratio. As the result, a nearly zero TCF resonator without strict control of ZnO/SiO_2 thickness ratio has been realized by adopting Al/ZnO/SiO_2/ZnO/Al/SiO_2 structure @and combining thermal oxidized Si and sputtered SiO_2. The resonator has the TCP of -1.86ppm/degree in the range of -40 to 85 degrees centigrade.
机译:我们已经成功地制造出了一个870MHz范围的薄膜体声波(BAW)谐振器,该谐振器使用二次谐波具有很小的频率温度系数(TCF)。要求870MHz范围的BAW谐振器具有接近零的TCF,因为它将用于远程无钥匙进入系统的振荡器中。 BAW谐振器具有由Al电极和ZnO / SiO_2组成的复合结构。我们将注意力集中在ZnO和Al具有负TCF,而SiO_2具有正TCF的事实。从理论上讲,可以通过优化ZnO和SiO_2的厚度比来制作零个TCP BAW谐振器。但是,使用基本共振,TCF对厚度比非常敏感,以致于它无法通过MEMS技术轻松控制。我们在有限元方法仿真中发现并通过实验证实,当改变ZnO / SiO_2厚度比时,二次谐波的TCF具有局部最小值。结果,通过采用Al / ZnO / SiO_2 / ZnO / Al / SiO_2结构,并结合了热氧化的Si和溅射的SiO_2,实现了在没有严格控制ZnO / SiO_2厚度比的情况下几乎为零的TCF谐振器。谐振器的TCP为-1.86ppm /度,范围为-40至85摄氏度。

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