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首页> 外文会议>Nanomaterial Synthesis and Integration for Sensors, Electronics, Photonics, and Electro-Optics; Proceedings of SPIE-The International Society for Optical Engineering; vol.6370 >Metal organic chemical vapor deposition of indium phosphide nanoneedles on non-single crystal silicon surfaces
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Metal organic chemical vapor deposition of indium phosphide nanoneedles on non-single crystal silicon surfaces

机译：非单晶硅表面上磷化铟纳米针的金属有机化学气相沉积

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摘要

A new route to grow single crystal semiconductor nanostructures was proposed and demonstrated on non-single crystal substrates. Hydrogenated silicon surfaces, amorphous silicon and microcrystalline silicon, were used to provide atomic short-range order required for epitaxial growth of nanostructures. Indium phosphide was chosen as a platform for semiconductor nanostructures. Indium phosphide was deposited on the hydrogenated silicon surfaces by low-pressure metalorganic chemical vapor deposition with a presence of colloidal gold nanoparticles. Under specific metal organic chemical vapor deposition growth conditions, the indium phosphide was found to grow into nanoneedles. Structural analysis reveals that the nanoneedles are single crystal and have either face-centered-cubic or hexagonal-closed-pack lattice when grown onto the hydrogenated microcrystalline silicon surfaces. Micro-photoluminescence measurements shows that the emission peak wavelength of an ensemble of the InP nanoneedles both on the hydrogenated amorphous silicon and hydrogenated microcrystalline silicon surfaces have a substantial blue-shift with respect to that of bulk indium phosphide. The unique shape of the emission spectra is attributed to different types of nanoneedles co-existing on the samples. The proposed route to grow semiconductor nanostructures on non-single crystal substrates would open new applications including photovoltaic, photo-detection, photo-emission and thermal energy-conversion, for which the usage of costly single crystal substrates is not preferred.
机译：提出了一种在非单晶衬底上生长单晶半导体纳米结构的新途径并得到了证明。氢化硅表面，非晶硅和微晶硅用于提供纳米结构外延生长所需的原子短程有序。磷化铟被选作半导体纳米结构的平台。在存在胶体金纳米颗粒的情况下，通过低压金属有机化学气相沉积将磷化铟沉积在氢化硅表面上。在特定的金属有机化学气相沉积生长条件下，发现磷化铟生长为纳米针。结构分析表明，纳米针是单晶的，生长到氢化的微晶硅表面时，具有面心立方或六方密堆积晶格。微光致发光测量表明，在氢化非晶硅和氢化微晶硅表面上，InP纳米针的整体的发射峰波长相对于本体磷化铟具有很大的蓝移。发射光谱的独特形状归因于样品中共存的不同类型的纳米针。所提出的在非单晶衬底上生长半导体纳米结构的途径将打开新的应用，包括光伏，光检测，光发射和热能转换，为此，不优选使用昂贵的单晶衬底。

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