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首页> 外文会议>Nanoscale thermoelectric materials: Thermal and electrical transport, and applications to solid-state cooling and power generation >Enhanced thermoelectric properties of Al-doped ZnO thin films
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Enhanced thermoelectric properties of Al-doped ZnO thin films

机译：铝掺杂ZnO薄膜的增强的热电性能

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摘要

We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO_3 and Al_2O_3 substrates by Pulsed Laser Deposition (PLD) technique at various deposition temperatures (T_(dep) = 300 ℃ -600 ℃). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K - 600 K). AZO/STO films present superior performance respect to AZO/Al_2O_3 films deposited at the same temperature, except for films deposited at 400 ℃. Best film is the fully c-axis oriented AZO/STO deposited at 300 ℃, with electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K and power factor 0.13 × 10~(-3) Wm~(-1)K~(-2) at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to × 10~(-3) Wm~(-1)K~(-2) at 600 K, surpassing the best AZO film previously reported in literature.
机译：我们在不同的沉积温度（T_（dep）= 300℃-600℃）下通过脉冲激光沉积（PLD）技术在SrTiO_3和Al_2O_3衬底上制备了2％的Al掺杂ZnO（AZO）薄膜。在低温范围（300 K-600 K）下研究了AZO薄膜的传输和热电性能。与在相同温度下沉积的AZO / Al_2O_3膜相比，AZO / STO膜具有更好的性能，但在400℃下沉积的膜除外。最好的薄膜是在300℃下沉积的全c轴取向的AZO / STO，电导率为310 S / cm，塞贝克系数为-65μV/ K，功率因数为0.13×10〜（-3）Wm〜（-1）K 〜（-2）在300 K时。其性能随温度而增加。例如，在600 K时，功率因数提高到×10〜（-3）Wm〜（-1）K〜（-2），超过了先前文献中报道的最佳AZO膜。

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  • 会议地点 San Francisco CA(US)
  • 作者

    P. Mele; S. Saini; H. Abe; H. Honda; K. Matsumoto; K. Miyazaki; H. Hagino; A. Ichinose;

  • 作者单位

    Hiroshima University, Institute for Sustainable Sciences and Development, 739-8530 Higashi-Hiroshima, Japan;

    Hiroshima University, Institute for Sustainable Sciences and Development, 739-8530 Higashi-Hiroshima, Japan;

    Hiroshima University, Graduate School for Advanced Sciences of Matter, 739-8530 Higashi-Hiroshima, Japan;

    Hiroshima University, Graduate School for Advanced Sciences of Matter, 739-8530 Higashi-Hiroshima, Japan;

    Kyushu Institute of Technology, Department of Material Science, 804-8550 Kitakyushu, Japan;

    Kyushu Institute of Technology, Department of Mechanical Engineering, 804-8550 Kitakyushu,Japan;

    Kyushu Institute of Technology, Department of Mechanical Engineering, 804-8550 Kitakyushu,Japan;

    CRIEPI, Electric Power Engineering Research Laboratory, 240-0196 Yokosuka, Japan;

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