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首页> 外文期刊>Solid state sciences >Study of the effect of stress/strain of mesoporous Al-doped ZnO thin films on thermoelectric properties
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Study of the effect of stress/strain of mesoporous Al-doped ZnO thin films on thermoelectric properties

机译：中孔型氮氮氮薄膜应力/菌株对热电性能的影响研究

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摘要

In this study, effects of induced stress and strain on the thermoelectric properties of mesoporous ZnO thin films with various Al doping concentrations were investigated. With Al doping in ZnO structure, the hexagonal wurtzite structure of ZnO was distorted owing to an ionic size difference between Al and Zn. With an increase in Al concentration to 4?at%, thermal conductivity unexpectedly decreased from 1.70 to 1.24?W/mK owing to an increase in the tensile strain, and electrical conductivity increased from 4?S/cm to 15?S/cm owing to an increase in the carrier concentration. Based on this study, the relationship between the induced strain owing to lattice distortion and thermoelectric properties was investigated. Thus, 4?at% Al-doped mesoporous ZnO demonstrated best enhanced thermoelectric properties.
机译：在该研究中，研究了诱导应激和应变对具有各种Al掺杂浓度的中孔ZnO薄膜热电性能的影响。 在ZnO结构中掺杂，由于Al和Zn之间的离子尺寸差异，ZnO的六边形紫立茨结构被扭曲。 随着抗拉应变的增加，Al浓度增加到4〜0.以％，导热率意外地从1.70到1.24〜1.24？ 增加载流子浓度。 基于该研究，研究了由于晶格变形和热电性能的诱导应变之间的关系。 因此，4？在％Al-掺杂的中孔ZnO中显示出最佳增强的热电性能。

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