Enhanced thermopower of GaN nanowires with transitional metal impurities

机译：具有过渡金属杂质的GaN纳米线的增强的热功率

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The thermopower properties of GaN nanowires with transitional metal impurities are investigated in the framework of constrained spin density functional theory (DFT) calculations. The nanowires are connected to nanoscopic Al[111] electrodes, which ensure a natural coupling to the wurtzite structure of the nanowires. We investigate the thermoelectric properties comparatively for the pristine GaN nanowire and the system with one Mn adatom. Our study points out the predicted qualitative behavior for systems with a peak in the total transmission, as well as the sign change in the thermopower. For the system with the magnetic impurity we find an enhanced conductance, thermopower and figure of merit. The detectable spin current polarization suggests the device structure may be also used in low temperature sensing applications.

机译：在约束自旋密度泛函理论（DFT）计算的框架内研究了具有过渡金属杂质的GaN纳米线的热电性能。纳米线连接到纳米Al [111]电极，以确保自然耦合到纳米线的纤锌矿结构。我们比较研究原始GaN纳米线和具有一个Mn原子的系统的热电性能。我们的研究指出了总传输达到峰值的系统的定性行为，以及火电的符号变化。对于具有磁性杂质的系统，我们发现其电导率，热功率和品质因数得到了提高。可检测到的自旋电流极化表明该器件结构也可用于低温传感应用。

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《Nanoscale thermoelectric materials: Thermal and electrical transport, and applications to solid-state cooling and power generation》|2013年|125-129|共5页
会议地点 San Francisco CA(US)
作者
G. A. Nemnes; Camelia Visan; T. L. Mitran; Adela Nicolaev; L. Ion; S. Antohe;
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University of Bucharest, Faculty of Physics, 'Materials and Devices for Electronics and Optoelectronics' Research Center, P.O. Box MG-11, 077125 Magurele-llfov, Romania;

'Horia Hulubei' National Institute for Physics and Nuclear Engineering (IFIN-HH), 077126 Magurele-Ilfov, Romania;

University of Bucharest, Faculty of Physics, 'Materials and Devices for Electronics and Optoelectronics' Research Center, P.O. Box MG-11, 077125 Magurele-llfov, Romania;

University of Bucharest, Faculty of Physics, 'Materials and Devices for Electronics and Optoelectronics' Research Center, P.O. Box MG-11, 077125 Magurele-llfov, Romania;

University of Bucharest, Faculty of Physics, 'Materials and Devices for Electronics and Optoelectronics' Research Center, P.O. Box MG-11, 077125 Magurele-llfov, Romania;

University of Bucharest, Faculty of Physics, 'Materials and Devices for Electronics and Optoelectronics' Research Center, P.O. Box MG-11, 077125 Magurele-llfov, Romania;

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专利

1. Ab initio investigation of spin-filter effects in GaN nanowires with transitional metal impurities [J] . Nemnes G. A., Visan Camelia European Physical Journal Plus . 2013,第11期

机译：从头开始研究具有过渡金属杂质的GaN纳米线中自旋滤波器的作用
2. Impurity-induced transition and impurity-enhanced thermopower in the thermoelectric oxide NaCo2-xCuxO4 - art. no. 195106 [J] . Terasaki I., Tsukada I., Iguchi Y. Physical Review, B. Condensed Matter . 2002,第19期

机译：热电氧化物NaCo2-xCuxO4中的杂质引起的跃迁和杂质增强的热电-艺术。没有。 195106
3. Strong Thermopower Enhancement and Tunable Power Factor via Semimetal to Semiconductor Transition in a Transition-Metal Dichalcogenide [J] . Moon Hongjae, Bang Joonho, Hong Seokkyoon, ACS nano . 2019,第11期

机译：通过半导体转变在过渡金属二甲基化物中的半导体过渡的强大热电机增强和可调谐功率因数
4. Enhanced thermopower of GaN nanowires with transitional metal impurities [C] . G. A. Nemnes, Camelia Visan, T. L. Mitran, Materials Research Society Spring Meeting . 2013

机译：随过渡金属杂质的GaN纳米线的增强散热器
5. The phonon entropy of transition metals and alloys: Effects of impurities and of a martensitic phase transition. [D] . Delaire, Olivier. 2006

机译：过渡金属和合金的声子熵：杂质和马氏体相变的影响。
6. Metallic conduction and large electron-phonon-impurity interference effect in single TiSi nanowires [O] . Wei-Che Hsu, Chao-Chun Chen, Yong-Han Lin, 2012

机译：TiSi纳米线中的金属传导和大的电子-声子-杂质干扰效应
7. Impurity-induced transition and impurity-enhanced thermopower in the thermoelectric oxide NaCo_{2-x}Cu_x$O_4 [O] . Terasaki, I., Tsukada, I., Iguchi, Y. 2002

机译：杂质诱导的过渡和杂质增强的热电势热电氧化物NaCo_ {2-x} Cu_x $ O_4

Enhanced thermopower of GaN nanowires with transitional metal impurities

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