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Suppression of Ferromagnetic Ordering in thicker co-sputtered Mn doped MgO Films

机译：共溅射Mn掺杂MgO薄膜中铁磁有序的抑制

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摘要

We report on preliminary studies of low (14 at.%) and high (53at.%) concentration Mn doped MgO films deposited by co-sputtering from metallic Mn and Mg targets. The structural, surface morphologies and magnetic properties of the films of different thickness were studied. All the as grown films are found to be amorphous and film surfaces are found to be flawless and homogeneous. We observe at room temperature robust ferromagnetic loops with a saturation magnetization value that is a function of film thickness reaching a maximum of ～38.5 emu/cm~3 in the Mn_(0.53)Mg_(0.47)O film at a thickness of ～92 nm. In thicker films room-temperature ferromagnetic ordering is suppressed and eventually at a thickness around 120nm the expected diamagnetism of the bulk appears. The origin of ferromagnetism may be attributed to cation defects at the Mg-site.
机译：我们报告了通过从金属Mn和Mg靶材共溅射沉积的低浓度（14 at。％）和高浓度（53at。％）的Mn掺杂MgO膜的初步研究。研究了不同厚度薄膜的结构，表面形貌和磁性。发现所有生长的膜都是无定形的，并且膜的表面是无缺陷的和均匀的。我们在室温下观察到坚固的铁磁回路，其饱和磁化强度是膜厚度在Mn_（0.53）Mg_（0.47）O膜厚度达到〜92 nm时最大达到膜厚度〜38.5 emu / cm〜3的函数。 。在较厚的薄膜中，室温铁磁有序受到抑制，最终在约120nm的厚度处出现了预期的整体反磁性。铁磁性的起源可能归因于Mg处的阳离子缺陷。

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  • 会议地点 San Francisco CA(US)
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    Sreekanth K. Mahadeva; Zhi-Yong Quan; J. C. Fan; K. S. Sreelatha; L. Belova; Roman Puzniak; K. V. Rao;

  • 作者单位

    Department of Materials Science, Royal Institute of Technology, Stockholm, SE100 44 Sweden,Department of Physics, Amrita Vishwa Vidyapeetham University, Amritapuri Campus, Kollam, 690 525, Kerala, India;

    Department of Materials Science, Royal Institute of Technology, Stockholm, SE100 44 Sweden,Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, Shanxi Normal University, Linfen, 041004, China;

    Department of Materials Science, Royal Institute of Technology, Stockholm, SE100 44 Sweden,School of Materials and Engineering, Anhui University of Technology, Maanshan, 243002, China;

    Department of Physics, Amrita Vishwa Vidyapeetham University, Amritapuri Campus, Kollam, 690 525, Kerala, India,Govt. Polytechnic College, Nattakom P O, Kottayam, 686 013, Kerala, India;

    Department of Materials Science, Royal Institute of Technology, Stockholm, SE100 44 Sweden;

    Govt. Polytechnic College, Nattakom P O, Kottayam, 686 013, Kerala, India;

    Department of Materials Science, Royal Institute of Technology, Stockholm, SE100 44 Sweden;

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