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PREPARATION AND CHARACTERIZATION OF STRAIGHT SIO_2 NANORODS

机译：直SIO_2纳米颗粒的制备与表征

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摘要

The straight SiO_2 nanorods with a diameter of about 200nm and smooth surface have been directly synthesized by high temperature vapor deposition method at 1300 . The as-synthesized samples were characterized by means of scanning electron microscopy, energy dispersive x-ray, and transmission electron microscopy. The results show that as-synthesized silica nanorods have a uniform size, well-defined shape, and smooth surface. However, the morphologies and microstructures of silica nanorodsare affected by synthesis conditions, such as the concentration of the SiO_x and the the deposition temperature. On the basis of these experimental results, a possible growth mechanism of silica nanorodsin this process is proposed.
机译：通过1300℃的高温气相沉积法直接合成了直径约为200nm，表面光滑的直SiO_2纳米棒。通过扫描电子显微镜，能量色散X射线和透射电子显微镜对合成后的样品进行表征。结果表明，合成后的二氧化硅纳米棒具有均匀的尺寸，明确的形状和光滑的表面。然而，二氧化硅纳米棒的形貌和微观结构受合成条件的影响，例如SiO_x的浓度和沉积温度。基于这些实验结果，提出了该过程中二氧化硅纳米棒的可能生长机理。

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  • 来源
  • 会议地点 Crete(GR);Crete(GR)
  • 作者

    Guang Zhu; Xiaoping Zou; Jin Cheng; Maofa Wang; Yi Su;

  • 作者单位

    Beijing Information Science Technology University,Beijing Key Laboratory for Sensor, Beijing 100101, China Suzhou College, Anhui 234000, China;

    Beijing Information Science Technology University,Beijing Key Laboratory for Sensor, Beijing 100101, China;

    Beijing Information Science Technology University,Beijing Key Laboratory for Sensor, Beijing 100101, China;

    Beijing Information Science Technology University,Beijing Key Laboratory for Sensor, Beijing 100101, China;

    Beijing Information Science Technology University,Beijing Key Laboratory for Sensor, Beijing 100101, China;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

    straight silica nanorods; concentration of SiO_x; scanning and transmission electron microscopy;

    机译：直二氧化硅纳米棒； SiO_x浓度；扫描和透射电子显微镜;

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