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首页> 外文会议>Nanotechnology III; Proceedings of SPIE-The International Society for Optical Engineering; vol.6591 >Charge transport in nanoscaled silicon-on-insulator devices
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Charge transport in nanoscaled silicon-on-insulator devices

机译：纳米级绝缘体上硅器件中的电荷传输

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摘要

The electron transport properties of different Silicon on Insulator (SOI) devices have been studied. We have considered two type of semiconductor structures: ⅰ) quantum-well SOI structures and ⅱ) quantum-wire devices. In the first group, Qwell-based devices, the electron mobility in double-gate SOI devices as the silicon thickness, decreases was compared with the mobility in Single-Gate SOI structures. Thus, we determined the existence of a range of silicon layer thicknesses in which electron mobility in DGSOI inversion layers is significantly improved as compared to bulk-silicon or SGSOI inversion layers, due to the volume inversion effect. With regard to QWire-based devices, we have analyzed the phonon-limited mobility in silicon quantum wires by means of a one-particle Monte Carlo simulator. It has been observed that the increasing of the phonon scattering produces a noticeable reduction of the electron mobility observed when the device dimensions are reduced. Therefore, we have observed that the transition from a 2D to a 1D electron gas produces a degradation of the electron transport properties.
机译：已经研究了不同的绝缘体上硅（SOI）器件的电子传输特性。我们考虑了两种类型的半导体结构：ⅰ）量子阱SOI结构和ⅱ）量子线器件。在第一组基于Qwell的器件中，将双栅极SOI器件中的电子迁移率随硅厚度的降低与单栅SOI结构中的迁移率进行了比较。因此，我们确定存在一定范围的硅层厚度，其中由于体积反转效应，与体硅或SGSOI反转层相比，DGSOI反转层中的电子迁移率显着提高。对于基于QWire的设备，我们已经通过单粒子蒙特卡洛模拟器分析了硅量子线中声子受限的迁移率。已经观察到，当减小器件尺寸时，声子散射的增加引起观察到的电子迁移率的显着降低。因此，我们已经观察到从2D到1D电子气的跃迁会降低电子传输性能。

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